Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

C. Y. Yen; S. R. Jian; G. J. Chen; C. M. Lin; H. Y. Lee; W. C. Ke; Y. Y. Liao; P. F. Yang; C. T. Wang; Y. S. Lai; Jason S.C. Jang; J. Y. Juang

doi:10.1016/j.apsusc.2011.04.088

Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

C. Y. Yen, S. R. Jian, G. J. Chen, C. M. Lin, H. Y. Lee, W. C. Ke, Y. Y. Liao, P. F. Yang, C. T. Wang, Y. S. Lai, Jason S.C. Jang, J. Y. Juang

Graduate Institute of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 °C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 °C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 °C and 500 °C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.

Original language	English
Pages (from-to)	7900-7905
Number of pages	6
Journal	Applied Surface Science
Volume	257
Issue number	17
DOIs	https://doi.org/10.1016/j.apsusc.2011.04.088
State	Published - 15 Jun 2011

Keywords

AFM
Atomic layer deposition
Hardness
Nanoindentation
XRD
ZnO thin films

Access to Document

10.1016/j.apsusc.2011.04.088

Cite this

Yen, C. Y., Jian, S. R., Chen, G. J., Lin, C. M., Lee, H. Y., Ke, W. C., Liao, Y. Y., Yang, P. F., Wang, C. T., Lai, Y. S., Jang, J. S. C., & Juang, J. Y. (2011). Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films. Applied Surface Science, 257(17), 7900-7905. https://doi.org/10.1016/j.apsusc.2011.04.088

@article{c7e27c80ddad411798f71c864b9f382d,

title = "Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films",

abstract = "ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 °C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 °C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 °C and 500 °C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.",

keywords = "AFM, Atomic layer deposition, Hardness, Nanoindentation, XRD, ZnO thin films",

author = "Yen, {C. Y.} and Jian, {S. R.} and Chen, {G. J.} and Lin, {C. M.} and Lee, {H. Y.} and Ke, {W. C.} and Liao, {Y. Y.} and Yang, {P. F.} and Wang, {C. T.} and Lai, {Y. S.} and Jang, {Jason S.C.} and Juang, {J. Y.}",

note = "Funding Information: This work was partially supported by the National Science Council of Taiwan , under grant no.: NSC97-2112-M-214-002-MY2 and NSC99-2112-M-214-001 . JYJ is partially supported by the MOE-ATU program operated at NCTU . ",

year = "2011",

month = jun,

day = "15",

doi = "10.1016/j.apsusc.2011.04.088",

language = "???core.languages.en_GB???",

volume = "257",

pages = "7900--7905",

journal = "Applied Surface Science",

issn = "0169-4332",

number = "17",

}

TY - JOUR

T1 - Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

AU - Yen, C. Y.

AU - Jian, S. R.

AU - Chen, G. J.

AU - Lin, C. M.

AU - Lee, H. Y.

AU - Ke, W. C.

AU - Liao, Y. Y.

AU - Yang, P. F.

AU - Wang, C. T.

AU - Lai, Y. S.

AU - Jang, Jason S.C.

AU - Juang, J. Y.

N1 - Funding Information: This work was partially supported by the National Science Council of Taiwan , under grant no.: NSC97-2112-M-214-002-MY2 and NSC99-2112-M-214-001 . JYJ is partially supported by the MOE-ATU program operated at NCTU .

PY - 2011/6/15

Y1 - 2011/6/15

N2 - ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 °C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 °C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 °C and 500 °C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.

AB - ZnO thin films grown on Si(1 1 1) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500 °C. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (0 0 2)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500 °C. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300 °C and 500 °C, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.

KW - AFM

KW - Atomic layer deposition

KW - Hardness

KW - Nanoindentation

KW - XRD

KW - ZnO thin films

UR - http://www.scopus.com/inward/record.url?scp=79957497908&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2011.04.088

DO - 10.1016/j.apsusc.2011.04.088

M3 - 期刊論文

AN - SCOPUS:79957497908

SN - 0169-4332

VL - 257

SP - 7900

EP - 7905

JO - Applied Surface Science

JF - Applied Surface Science

IS - 17

ER -

Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

Abstract

Keywords

Access to Document

Fingerprint

Cite this