Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

Shih Hsien Huang; Sheng Chen Twan; Shao Liang Cheng; Tu Lee; Jung Chih Hu; Lien Tai Chen; Sheng Wei Lee

doi:10.1016/j.jallcom.2013.02.133

Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

Shih Hsien Huang, Sheng Chen Twan, Shao Liang Cheng, Tu Lee, Jung Chih Hu, Lien Tai Chen, Sheng Wei Lee

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni₂Si-NiSi phase transformation but significantly promote the NiSi_2- _xAl_x formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni _1-xAl_x alloys. Compared to the Ni _0.95Pt_0.05/Si and Ni_0.95Al_0.05/Si system, the Ni_0.91Al_0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni_1-xAl_x alloy silicidation. This work demonstrated that thermally stable Ni_1-xAl_x alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal-oxide-semiconductor (CMOS) devices.

Original language	English
Pages (from-to)	S362-S367
Journal	Journal of Alloys and Compounds
Volume	586
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.jallcom.2013.02.133
State	Published - 2014

Keywords

Sheet resistance
Silicide
Thermal stability
Transmission electron microscopy

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10.1016/j.jallcom.2013.02.133

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@article{b28204bc9b4a407a93db4b1da9f1e079,

title = "Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)",

abstract = "The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni2Si-NiSi phase transformation but significantly promote the NiSi2- xAlx formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1-xAlx alloys. Compared to the Ni 0.95Pt0.05/Si and Ni0.95Al0.05/Si system, the Ni0.91Al0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni1-xAlx alloy silicidation. This work demonstrated that thermally stable Ni1-xAlx alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal-oxide-semiconductor (CMOS) devices.",

keywords = "Sheet resistance, Silicide, Thermal stability, Transmission electron microscopy",

author = "Huang, {Shih Hsien} and Twan, {Sheng Chen} and Cheng, {Shao Liang} and Tu Lee and Hu, {Jung Chih} and Chen, {Lien Tai} and Lee, {Sheng Wei}",

note = "Funding Information: The research is supported by National Nano Device Laboratories and National Science Council of Taiwan under Contract No. NSC 100-2221-E-008-016-MY3. The authors also thank National Nano Device Laboratories and Center for Nano Science and Technology at National Central University for the facility support.",

year = "2014",

doi = "10.1016/j.jallcom.2013.02.133",

language = "???core.languages.en_GB???",

volume = "586",

pages = "S362--S367",

journal = "Journal of Alloys and Compounds",

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TY - JOUR

T1 - Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

AU - Huang, Shih Hsien

AU - Twan, Sheng Chen

AU - Cheng, Shao Liang

AU - Lee, Tu

AU - Hu, Jung Chih

AU - Chen, Lien Tai

AU - Lee, Sheng Wei

N1 - Funding Information: The research is supported by National Nano Device Laboratories and National Science Council of Taiwan under Contract No. NSC 100-2221-E-008-016-MY3. The authors also thank National Nano Device Laboratories and Center for Nano Science and Technology at National Central University for the facility support.

PY - 2014

Y1 - 2014

N2 - The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni2Si-NiSi phase transformation but significantly promote the NiSi2- xAlx formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1-xAlx alloys. Compared to the Ni 0.95Pt0.05/Si and Ni0.95Al0.05/Si system, the Ni0.91Al0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni1-xAlx alloy silicidation. This work demonstrated that thermally stable Ni1-xAlx alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal-oxide-semiconductor (CMOS) devices.

AB - The influence of Al addition on the phase transformation and thermal stability of Ni silicides on (0 0 1)Si has been systematically investigated. The presence of Al atoms is found to slow down the Ni2Si-NiSi phase transformation but significantly promote the NiSi2- xAlx formation during annealing. The behavior of phase transformation strongly depends on the Al concentration of the initial Ni 1-xAlx alloys. Compared to the Ni 0.95Pt0.05/Si and Ni0.95Al0.05/Si system, the Ni0.91Al0.09/Si sample exhibits remarkably enhanced thermal stability, even after high temperature annealing for 1000 s. The relationship between microstructures, electrical property, and thermal stability of Ni silicides is discussed to elucidate the role of Al during the Ni1-xAlx alloy silicidation. This work demonstrated that thermally stable Ni1-xAlx alloy silicides would be a promising candidate as source/drain (S/D) contacts in advanced complementary metal-oxide-semiconductor (CMOS) devices.

KW - Sheet resistance

KW - Silicide

KW - Thermal stability

KW - Transmission electron microscopy

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U2 - 10.1016/j.jallcom.2013.02.133

DO - 10.1016/j.jallcom.2013.02.133

M3 - 期刊論文

AN - SCOPUS:84889084753

SN - 0925-8388

VL - 586

SP - S362-S367

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

IS - SUPPL. 1

ER -

Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(0 0 1)

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