Indium profiles in InGaAs with heavy ion RBS

M. Döbeli, P. C. Haubert, T. A. Tombrello, J. I. Chyi, D. Huang, H. Morkoç

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


The indium profile of MBE-grown InxGa1-xAs/GaAs single quantum well structures and InxGa1-xAs layers on InAlAs buffer layers have been measured with heavy ion Rutherford backscattering using a time-of-flight detector. The depth resolution of the method is better than 30 Å at the sample surface using 15 MeV 35Cl ions. The results for the average indium molar fraction are compared with photo reflectance measurements. The aluminum molar fraction in the InAlAs buffer layer has been profiled by nuclear reaction analysis.

Original languageEnglish
Pages (from-to)72-78
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1
StatePublished - Nov 1990


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