Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-Dip

F. S. Lo, C. C. Chiang, C. Li, T. H. Lee

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Nitrogen plasma-activated wafer bonding provides high-strength Si/Si wafer bonding. We found that a hydrofluoric (HF) pre-dip treatment can increase more bonding energy. By reducing drastically the annealing temperature to as low as 75°C, HF-dip and subsequent nitrogen-plasma activation can result in an bonding energy of the Si/Si pair comparable to the silicon fracture strength (2500 mJ/m2). In Si3N4/Si3N 4 wafer bonding, the room-temperature bonding results in interface energy as high as 537 mJ/m2 and then reaches the silicon fracture strength through annealing at 200°C for 24 hours. We suggest that the high-strength bonding mechanism is the formation of Si-NH-Si bonds during annealing.

Original languageEnglish
Pages (from-to)P102-P104
JournalECS Solid State Letters
Volume3
Issue number8
DOIs
StatePublished - 2014

Fingerprint

Dive into the research topics of 'Increasing more bonding energy in nitrogen plasma-activated wafer bonding by HF-Dip'. Together they form a unique fingerprint.

Cite this