The incorporation of Mg in GaN grown by metal-organic chemical vapor deposition on a sapphire substrate is investigated. From the secondary ion mass spectroscopy (SIMS) profiles of Mg-doped GaN films, it is found that the chemical concentration of Mg increases with growth time, i.e. toward the surface. Mg did not achieve saturation concentration for samples of even 2.5 μm-thick. The effects of growth conditions, such as substrate temperature, growth ambient conditions, and V/III ratio, on the incorporation of Mg were also examined. In addition to bulk Mg-doped samples, the behavior of Mg in p-n homojunction as well as InGaN/GaN multiple quantum well (MQW) light emitting diode structures were also studied.
|Number of pages||5|
|Journal||Journal of the Chinese Institute of Electrical Engineering, Transactions of the Chinese Institute of Engineers, Series E/Chung KuoTien Chi Kung Chieng Hsueh K'an|
|State||Published - Aug 2000|