InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular-beam epitaxy

Nien Tze Yeh, Wei Sheng Liu, Shu Han Chen, Pe Chin Chiu, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

This letter presents the lasing properties of InAs/GaAs quantum dot lasers with InGaP cladding layers grown by solid-source molecular-beam epitaxy. These Al-free lasers exhibit a threshold current density of 138A/cm2, an internal loss of 1.35cm-1, and an internal quantum efficiency of 31% at room temperature. At a low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30A/cm 2 are measured.

Original languageEnglish
Pages (from-to)535-537
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number4
DOIs
StatePublished - 28 Jan 2002

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