InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

N. T. Yeh; W. S. Liu; S. H. Chen; P. J. Chiu; J. I. Chyi

InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

N. T. Yeh, W. S. Liu, S. H. Chen, P. J. Chiu, J. I. Chyi

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm², an internal loss of 1.35 cm^-1 and an internal quantum efficiency of 31 % at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm² are measured.

Original language	English
Pages	87-90
Number of pages	4
State	Published - 2001
Event	2001 International Conference on Indium Phosphide and Related Materials - Nara, Japan Duration: 14 May 2001 → 18 May 2001

Conference

Conference	2001 International Conference on Indium Phosphide and Related Materials
Country/Territory	Japan
City	Nara
Period	14/05/01 → 18/05/01

Cite this

@conference{ab3d662ae783423eb75f606c2a04a0fc,

title = "InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy",

abstract = "This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm-1 and an internal quantum efficiency of 31 % at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.",

author = "Yeh, {N. T.} and Liu, {W. S.} and Chen, {S. H.} and Chiu, {P. J.} and Chyi, {J. I.}",

year = "2001",

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pages = "87--90",

note = "2001 International Conference on Indium Phosphide and Related Materials ; Conference date: 14-05-2001 Through 18-05-2001",

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TY - CONF

T1 - InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

AU - Yeh, N. T.

AU - Liu, W. S.

AU - Chen, S. H.

AU - Chiu, P. J.

AU - Chyi, J. I.

PY - 2001

Y1 - 2001

N2 - This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm-1 and an internal quantum efficiency of 31 % at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.

AB - This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm-1 and an internal quantum efficiency of 31 % at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured.

UR - http://www.scopus.com/inward/record.url?scp=0034847856&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0034847856

SP - 87

EP - 90

T2 - 2001 International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2001 through 18 May 2001

ER -

InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy

Abstract

Conference

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