@inproceedings{07ed92454c9048ba96d7a5d389ee60e6,
title = "InAs photodiode on semi-insulating GaAs substrate with Zn-diffusion guard-ring for high-speed and low dark current performance",
abstract = "We demonstrate InAs photodiodes on semi-insulating GaAs substrate with Zn-diffusion guard-ring. It exhibits a 3-dB bandwidth as wide as 17 GHz under a small bias (-0.2V) with a reasonable dark current density (11A/cm2) at room temperature.",
author = "Shi, {J. W.} and Kuo, {F. M.} and Huang, {B. R.} and D. Lubyshev and Fastenau, {J. M.} and Liu, {W. K.}",
year = "2010",
doi = "10.1109/PHOTONICS.2010.5698945",
language = "???core.languages.en_GB???",
isbn = "9781424453689",
series = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",
pages = "433--434",
booktitle = "2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010",
note = "23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 ; Conference date: 07-11-2010 Through 11-11-2010",
}