InAs photodiode on semi-insulating GaAs substrate with Zn-diffusion guard-ring for high-speed and low dark current performance

J. W. Shi, F. M. Kuo, B. R. Huang, D. Lubyshev, J. M. Fastenau, W. K. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We demonstrate InAs photodiodes on semi-insulating GaAs substrate with Zn-diffusion guard-ring. It exhibits a 3-dB bandwidth as wide as 17 GHz under a small bias (-0.2V) with a reasonable dark current density (11A/cm2) at room temperature.

Original languageEnglish
Title of host publication2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Pages433-434
Number of pages2
DOIs
StatePublished - 2010
Event23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010 - Denver, CO, United States
Duration: 7 Nov 201011 Nov 2010

Publication series

Name2010 23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010

Conference

Conference23rd Annual Meeting of the IEEE Photonics Society, PHOTINICS 2010
Country/TerritoryUnited States
CityDenver, CO
Period7/11/1011/11/10

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