InAs MOS devices passivated with molecular beam epitaxy-grown Gd 2O3 dielectrics

C. A. Lin, M. L. Huang, P. C. Chiu, H. K. Lin, J. I. Chyi, T. H. Chiang, W. C. Lee, Y. C. Chang, Y. H. Chang, G. J. Brown, J. Kwo, M. Hong

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