InAs MOS devices passivated with molecular beam epitaxy-grown Gd 2O3 dielectrics

C. A. Lin, M. L. Huang, P. C. Chiu, H. K. Lin, J. I. Chyi, T. H. Chiang, W. C. Lee, Y. C. Chang, Y. H. Chang, G. J. Brown, J. Kwo, M. Hong

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InAs MOS devices passivated with molecular beam epitaxy (MBE)-grown Gd 2O3 2-3 monolayers thick followed by an Al 2O3 cap have demonstrated excellent electrical performances and interfacial properties. Band offset energies of in situ atomic-layer-deposited (ALD)-Al2O3/MBE-Gd 2O3/InAs and ALD-Al2O3/InAs were determined by in situ x-ray photoelectron spectroscopy in conjunction with Fowler-Nordheim tunneling current analysis. A conduction-band offset energy ( E c) and a valence-band offset energy of 2.3 and 3.92 eV for ALD-Al 2O3/InAs were determined, respectively. The insertion of a Gd2O3 layer increases the value of ΔEc by nearly 0.1 eV as compared to the case for Al2O3 directly deposited on InAs. The distribution of interfacial density of states (Dit) within the InAs bandgap, deduced by the conductance method at 77 K, gives a low Dit value of 1012 cm-2 eV-1 near the conduction-band edge. Moreover, with energy band engineering in the heterostructure, gate-first depletion channel InAs MOSFETs have produced drain current density of 46 μA/μm and transconductance of 17 μS/μm for 12-μm-gate-length devices at 300 K.

Original languageEnglish
Article number02B118
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number2
StatePublished - Mar 2012


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