InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

Lung I. Chou; Li Yi Peng; Hsiang Chun Wang; Hsien Chin Chiu; How Ting Wang; Dong Long Chiang; Jen Inn Chyi

doi:10.1109/CSICS.2017.8240448

InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

Lung I. Chou, Li Yi Peng, Hsiang Chun Wang, Hsien Chin Chiu, How Ting Wang, Dong Long Chiang, Jen Inn Chyi

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C∼550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.

Original language	English
Title of host publication	2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-3
Number of pages	3
ISBN (Electronic)	9781509060696
DOIs	https://doi.org/10.1109/CSICS.2017.8240448
State	Published - 26 Dec 2017
Event	39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 - Miami, United States Duration: 22 Oct 2017 → 25 Oct 2017

Publication series

Name	2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Volume	2017-January

Conference

Conference	39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Country/Territory	United States
City	Miami
Period	22/10/17 → 25/10/17

Keywords

GaN
HEMTs
InAlN
microwave annealing (MWA)
Ohmic contacts
RF
surface morphology

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10.1109/CSICS.2017.8240448

Cite this

Chou, L. I., Peng, L. Y., Wang, H. C., Chiu, H. C., Wang, H. T., Chiang, D. L., & Chyi, J. I. (2017). InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 (pp. 1-3). (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017; Vol. 2017-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2017.8240448

@inproceedings{e5e9143940674ce9b783c755eccca087,

title = "InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation",

abstract = "In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C∼550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.",

keywords = "GaN, HEMTs, InAlN, microwave annealing (MWA), Ohmic contacts, RF, surface morphology",

author = "Chou, {Lung I.} and Peng, {Li Yi} and Wang, {Hsiang Chun} and Chiu, {Hsien Chin} and Wang, {How Ting} and Chiang, {Dong Long} and Chyi, {Jen Inn}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 ; Conference date: 22-10-2017 Through 25-10-2017",

year = "2017",

month = dec,

day = "26",

doi = "10.1109/CSICS.2017.8240448",

language = "???core.languages.en_GB???",

series = "2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1--3",

booktitle = "2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017",

}

Chou, LI, Peng, LY, Wang, HC, Chiu, HC, Wang, HT, Chiang, DL & Chyi, JI 2017, InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation. in 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017, vol. 2017-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-3, 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017, Miami, United States, 22/10/17. https://doi.org/10.1109/CSICS.2017.8240448

InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation. / Chou, Lung I.; Peng, Li Yi; Wang, Hsiang Chun et al.
2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1-3 (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017; Vol. 2017-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

AU - Chou, Lung I.

AU - Peng, Li Yi

AU - Wang, Hsiang Chun

AU - Chiu, Hsien Chin

AU - Wang, How Ting

AU - Chiang, Dong Long

AU - Chyi, Jen Inn

PY - 2017/12/26

Y1 - 2017/12/26

N2 - In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C∼550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.

AB - In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C∼550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.

KW - GaN

KW - HEMTs

KW - InAlN

KW - microwave annealing (MWA)

KW - Ohmic contacts

KW - RF

KW - surface morphology

UR - http://www.scopus.com/inward/record.url?scp=85045987417&partnerID=8YFLogxK

U2 - 10.1109/CSICS.2017.8240448

DO - 10.1109/CSICS.2017.8240448

M3 - 會議論文篇章

AN - SCOPUS:85045987417

T3 - 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017

SP - 1

EP - 3

BT - 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017

Y2 - 22 October 2017 through 25 October 2017

ER -

Chou LI, Peng LY, Wang HC, Chiu HC, Wang HT, Chiang DL et al. InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation. In 2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1-3. (2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017). doi: 10.1109/CSICS.2017.8240448

InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

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