InAlN/GaN HEMT using microwave annealing for low temperature ohmic contact formation

Lung I. Chou, Li Yi Peng, Hsiang Chun Wang, Hsien Chin Chiu, How Ting Wang, Dong Long Chiang, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this letter, a microwave annealing (MWA) method for Ohmic contact applied to InAlN/GaN high electron mobility transistor (HEMT) is the first time. The feature of MWA method is low operating temperature (450°C∼550°C). By using this technique, MWA-HEMT can achieve a low Ohmic contact resistance and smoother Ohmic contact surface than traditional rapid thermal annealing (RTA). The situation of Indium diffusion and device gate leakage current has been improved by this technique. Moreover, the reliability and RF performance of MWA-HEMT has a better result than RTA-HEMT.

Original languageEnglish
Title of host publication2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509060696
DOIs
StatePublished - 26 Dec 2017
Event39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017 - Miami, United States
Duration: 22 Oct 201725 Oct 2017

Publication series

Name2017 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Volume2017-January

Conference

Conference39th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2017
Country/TerritoryUnited States
CityMiami
Period22/10/1725/10/17

Keywords

  • GaN
  • HEMTs
  • InAlN
  • microwave annealing (MWA)
  • Ohmic contacts
  • RF
  • surface morphology

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