In0.52 Al0.48 As/In0.53 Ga0.47 As Double-Heterojunction p-n-p Bipolar Transistors Grown by Molecular Beam Epitaxy

T. Won, C. K. Peng, J. Chyi, Hadis Morkoç

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

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Engineering & Materials Science

Chemical Compounds