In                         0.29                         Al                         0.71                         As/In                         0.3                         Ga                         0.7                         As heterostructure devices grown on GaAs substrates with a metamorphic buffer design

Y. J. Chan; J. I. Chyi; C. S. Wu; H. P. Hwang; M. T. Yang; R. M. Lin; J. L. Shieh

doi:10.1109/DRC.1994.1009456

In _0.29 Al _0.71 As/In _0.3 Ga _0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design

Y. J. Chan, J. I. Chyi, C. S. Wu, H. P. Hwang, M. T. Yang, R. M. Lin, J. L. Shieh

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Article number	1009456
Pages (from-to)	159-160
Number of pages	2
Journal	Device Research Conference - Conference Digest, DRC
DOIs	https://doi.org/10.1109/DRC.1994.1009456
State	Published - 1994
Event	52nd Annual Device Research Conference, DRC 1994 - Boulder, United States Duration: 20 Jun 1994 → 22 Jun 1994

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10.1109/DRC.1994.1009456

Cite this

Chan, Y. J., Chyi, J. I., Wu, C. S., Hwang, H. P., Yang, M. T., Lin, R. M., & Shieh, J. L. (1994). In _0.29 Al _0.71 As/In _0.3 Ga _0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design Device Research Conference - Conference Digest, DRC, 159-160. Article 1009456. https://doi.org/10.1109/DRC.1994.1009456

Chan, Y. J. ; Chyi, J. I. ; Wu, C. S. et al. / In _0.29 Al _0.71 As/In _0.3 Ga _0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design In: Device Research Conference - Conference Digest, DRC. 1994 ; pp. 159-160.

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title = " In 0.29 Al 0.71 As/In 0.3 Ga 0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design ",

author = "Chan, {Y. J.} and Chyi, {J. I.} and Wu, {C. S.} and Hwang, {H. P.} and Yang, {M. T.} and Lin, {R. M.} and Shieh, {J. L.}",

note = "Funding Information: [ 11 P. Win et. al., Appl. Phys. Lett., 61, p.922, 1992. This work was supported by the National Science Council, ROC (NSC 83-0404-E-008-005, NSC 83-0.04-E-008-002).; 52nd Annual Device Research Conference, DRC 1994 ; Conference date: 20-06-1994 Through 22-06-1994",

year = "1994",

doi = "10.1109/DRC.1994.1009456",

language = "???core.languages.en_GB???",

pages = "159--160",

journal = "Device Research Conference - Conference Digest, DRC",

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Chan, YJ, Chyi, JI, Wu, CS, Hwang, HP, Yang, MT, Lin, RM & Shieh, JL 1994, ' In _0.29 Al _0.71 As/In _0.3 Ga _0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design ', Device Research Conference - Conference Digest, DRC, pp. 159-160. https://doi.org/10.1109/DRC.1994.1009456

In _0.29 Al _0.71 As/In _0.3 Ga _0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design . / Chan, Y. J.; Chyi, J. I.; Wu, C. S. et al.
In: Device Research Conference - Conference Digest, DRC, 1994, p. 159-160.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - In 0.29 Al 0.71 As/In 0.3 Ga 0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design

AU - Chan, Y. J.

AU - Chyi, J. I.

AU - Wu, C. S.

AU - Hwang, H. P.

AU - Yang, M. T.

AU - Lin, R. M.

AU - Shieh, J. L.

N1 - Funding Information: [ 11 P. Win et. al., Appl. Phys. Lett., 61, p.922, 1992. This work was supported by the National Science Council, ROC (NSC 83-0404-E-008-005, NSC 83-0.04-E-008-002).

PY - 1994

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DO - 10.1109/DRC.1994.1009456

M3 - 會議論文

AN - SCOPUS:85063583594

SN - 1548-3770

SP - 159

EP - 160

JO - Device Research Conference - Conference Digest, DRC

JF - Device Research Conference - Conference Digest, DRC

M1 - 1009456

T2 - 52nd Annual Device Research Conference, DRC 1994

Y2 - 20 June 1994 through 22 June 1994

ER -

Chan YJ, Chyi JI, Wu CS, Hwang HP, Yang MT, Lin RM et al. In _0.29 Al _0.71 As/In _0.3 Ga _0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design Device Research Conference - Conference Digest, DRC. 1994;159-160. 1009456. doi: 10.1109/DRC.1994.1009456