In 0.29 Al 0.71 As/In 0.3 Ga 0.7 As heterostructure devices grown on GaAs substrates with a metamorphic buffer design

Y. J. Chan, J. I. Chyi, C. S. Wu, H. P. Hwang, M. T. Yang, R. M. Lin, J. L. Shieh

Research output: Contribution to journalConference articlepeer-review

Original languageEnglish
Article number1009456
Pages (from-to)159-160
Number of pages2
JournalDevice Research Conference - Conference Digest, DRC
StatePublished - 1994
Event52nd Annual Device Research Conference, DRC 1994 - Boulder, United States
Duration: 20 Jun 199422 Jun 1994

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