In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

N. Y. Li, Y. M. Hsin, W. G. Bi, P. M. Asbeck, C. W. Tu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance-voltage carrier profiles, and current-voltage (I-V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (>20) of GaAs over AlxGa1-xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I-V characteristics of etched/regrown p-n AlxGa1-xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1-xAs.

Original languageEnglish
Pages (from-to)2589-2591
Number of pages3
JournalApplied Physics Letters
Issue number19
StatePublished - 12 May 1997


Dive into the research topics of 'In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic'. Together they form a unique fingerprint.

Cite this