In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

N. Y. Li; Y. M. Hsin; W. G. Bi; P. M. Asbeck; C. W. Tu

doi:10.1063/1.119087

In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

N. Y. Li, Y. M. Hsin, W. G. Bi, P. M. Asbeck, C. W. Tu

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Abstract

We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance-voltage carrier profiles, and current-voltage (I-V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (>20) of GaAs over Al_xGa_1-xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I-V characteristics of etched/regrown p-n Al_xGa_1-xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of Al_xGa_1-xAs.

Original language	English
Pages (from-to)	2589-2591
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	19
DOIs	https://doi.org/10.1063/1.119087
State	Published - 12 May 1997

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title = "In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic",

abstract = "We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance-voltage carrier profiles, and current-voltage (I-V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (>20) of GaAs over AlxGa1-xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I-V characteristics of etched/regrown p-n AlxGa1-xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1-xAs.",

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T1 - In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

AU - Li, N. Y.

AU - Hsin, Y. M.

AU - Bi, W. G.

AU - Asbeck, P. M.

AU - Tu, C. W.

PY - 1997/5/12

Y1 - 1997/5/12

N2 - We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance-voltage carrier profiles, and current-voltage (I-V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (>20) of GaAs over AlxGa1-xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I-V characteristics of etched/regrown p-n AlxGa1-xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1-xAs.

AB - We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance-voltage carrier profiles, and current-voltage (I-V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (>20) of GaAs over AlxGa1-xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I-V characteristics of etched/regrown p-n AlxGa1-xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1-xAs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic

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