In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application

Yu Lin Hsieh; Li Han Kau; Hung Jui Huang; Chien Chieh Lee; Yiin Kuen Fuh; Tomi T. Li

doi:10.1109/CSTIC.2018.8369253

In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application

Yu Lin Hsieh, Li Han Kau, Hung Jui Huang, Chien Chieh Lee, Yiin Kuen Fuh, Tomi T. Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Silicon-based solar cell manufacturing via plasma enhanced chemical vapor deposition (PECVD) of both active/passive layers is investigated. In addition, in-situ plasma diagnostics of the deposition process can be monitored in real-time. Two types of complementary diagnostics, namely optical emission spectroscopy (OES) and quadruple mass spectrometry (QMS) are applied to an PECVD reactor. Furthermore, the impact of chamber wall conditioning on the solar cell performance is experimentally investigated based on symmetrical stacks structure (a-Si:H(i) / CZ wafer (n)/ a-Si:H(i)) and the n-type hydrogenated amorphous silicon (a-Si:H) growth process conditions were optimized. Silicon heterojunction (SHJ) solar cell back surface field (BSF) layer was prepared by conventional radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and the processing conditions in terms of the phosphine flow (1-20sccm), hydrogen dilution ratio (R=H2/SiH4) as 1-5 and symmetrical stacks structure using a (PH3/SiH4/H2/Ar) mixture were experimentally optimized. In addition, characterization of effective carrier lifetime (τ_eff), electrical and structure properties as well as correlation with the hydrogen dilution ratio were systematically discussed with the emphasis on the effectiveness of passivation layer. A high quality intrinsic/n-type a-Si:H layer stack BSF layer with measured effective carrier lifetime (τ_eff) of 1.8ms (which counts for implied Voc 0.707 V), can be consistently obtained and this improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

Original language	English
Title of host publication	China Semiconductor Technology International Conference 2018, CSTIC 2018
Editors	Hanming Wu, Peilin Song, Qinghuang Lin, Yuchun Wang, Cor Claeys, Hsiang-Lang Lung, Ying Zhang, Steve Liang, Yiyu Shi, Ru Huang, Zhen Guo, Kafai Lai
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-5
Number of pages	5
ISBN (Electronic)	9781538653081
DOIs	https://doi.org/10.1109/CSTIC.2018.8369253
State	Published - 29 May 2018
Event	2018 China Semiconductor Technology International Conference, CSTIC 2018 - Shanghai, China Duration: 11 Mar 2018 → 12 Mar 2018

Publication series

Name	China Semiconductor Technology International Conference 2018, CSTIC 2018

Conference

Conference	2018 China Semiconductor Technology International Conference, CSTIC 2018
Country/Territory	China
City	Shanghai
Period	11/03/18 → 12/03/18

Keywords

a-Si
Back surface field (BSF)
effective carrier lifetime (Teff)
H
Passivation
PECVD
plasma diagnostics
RF-PECVD
silicon heterojunction (SHJ)

Access to Document

10.1109/CSTIC.2018.8369253

Cite this

Hsieh, Y. L., Kau, L. H., Huang, H. J., Lee, C. C., Fuh, Y. K., & Li, T. T. (2018). In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application. In H. Wu, P. Song, Q. Lin, Y. Wang, C. Claeys, H.-L. Lung, Y. Zhang, S. Liang, Y. Shi, R. Huang, Z. Guo, & K. Lai (Eds.), China Semiconductor Technology International Conference 2018, CSTIC 2018 (pp. 1-5). (China Semiconductor Technology International Conference 2018, CSTIC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSTIC.2018.8369253

Hsieh, Yu Lin ; Kau, Li Han ; Huang, Hung Jui et al. / In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application. China Semiconductor Technology International Conference 2018, CSTIC 2018. editor / Hanming Wu ; Peilin Song ; Qinghuang Lin ; Yuchun Wang ; Cor Claeys ; Hsiang-Lang Lung ; Ying Zhang ; Steve Liang ; Yiyu Shi ; Ru Huang ; Zhen Guo ; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-5 (China Semiconductor Technology International Conference 2018, CSTIC 2018).

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title = "In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application",

abstract = "Silicon-based solar cell manufacturing via plasma enhanced chemical vapor deposition (PECVD) of both active/passive layers is investigated. In addition, in-situ plasma diagnostics of the deposition process can be monitored in real-time. Two types of complementary diagnostics, namely optical emission spectroscopy (OES) and quadruple mass spectrometry (QMS) are applied to an PECVD reactor. Furthermore, the impact of chamber wall conditioning on the solar cell performance is experimentally investigated based on symmetrical stacks structure (a-Si:H(i) / CZ wafer (n)/ a-Si:H(i)) and the n-type hydrogenated amorphous silicon (a-Si:H) growth process conditions were optimized. Silicon heterojunction (SHJ) solar cell back surface field (BSF) layer was prepared by conventional radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and the processing conditions in terms of the phosphine flow (1-20sccm), hydrogen dilution ratio (R=H2/SiH4) as 1-5 and symmetrical stacks structure using a (PH3/SiH4/H2/Ar) mixture were experimentally optimized. In addition, characterization of effective carrier lifetime (τeff), electrical and structure properties as well as correlation with the hydrogen dilution ratio were systematically discussed with the emphasis on the effectiveness of passivation layer. A high quality intrinsic/n-type a-Si:H layer stack BSF layer with measured effective carrier lifetime (τeff) of 1.8ms (which counts for implied Voc 0.707 V), can be consistently obtained and this improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.",

keywords = "a-Si, Back surface field (BSF), effective carrier lifetime (Teff), H, Passivation, PECVD, plasma diagnostics, RF-PECVD, silicon heterojunction (SHJ)",

author = "Hsieh, {Yu Lin} and Kau, {Li Han} and Huang, {Hung Jui} and Lee, {Chien Chieh} and Fuh, {Yiin Kuen} and Li, {Tomi T.}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 China Semiconductor Technology International Conference, CSTIC 2018 ; Conference date: 11-03-2018 Through 12-03-2018",

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Hsieh, YL, Kau, LH, Huang, HJ, Lee, CC , Fuh, YK & Li, TT 2018, In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application. in H Wu, P Song, Q Lin, Y Wang, C Claeys, H-L Lung, Y Zhang, S Liang, Y Shi, R Huang, Z Guo & K Lai (eds), China Semiconductor Technology International Conference 2018, CSTIC 2018. China Semiconductor Technology International Conference 2018, CSTIC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-5, 2018 China Semiconductor Technology International Conference, CSTIC 2018, Shanghai, China, 11/03/18. https://doi.org/10.1109/CSTIC.2018.8369253

In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application. / Hsieh, Yu Lin; Kau, Li Han; Huang, Hung Jui et al.
China Semiconductor Technology International Conference 2018, CSTIC 2018. ed. / Hanming Wu; Peilin Song; Qinghuang Lin; Yuchun Wang; Cor Claeys; Hsiang-Lang Lung; Ying Zhang; Steve Liang; Yiyu Shi; Ru Huang; Zhen Guo; Kafai Lai. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-5 (China Semiconductor Technology International Conference 2018, CSTIC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application

AU - Hsieh, Yu Lin

AU - Kau, Li Han

AU - Huang, Hung Jui

AU - Lee, Chien Chieh

AU - Fuh, Yiin Kuen

AU - Li, Tomi T.

PY - 2018/5/29

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N2 - Silicon-based solar cell manufacturing via plasma enhanced chemical vapor deposition (PECVD) of both active/passive layers is investigated. In addition, in-situ plasma diagnostics of the deposition process can be monitored in real-time. Two types of complementary diagnostics, namely optical emission spectroscopy (OES) and quadruple mass spectrometry (QMS) are applied to an PECVD reactor. Furthermore, the impact of chamber wall conditioning on the solar cell performance is experimentally investigated based on symmetrical stacks structure (a-Si:H(i) / CZ wafer (n)/ a-Si:H(i)) and the n-type hydrogenated amorphous silicon (a-Si:H) growth process conditions were optimized. Silicon heterojunction (SHJ) solar cell back surface field (BSF) layer was prepared by conventional radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and the processing conditions in terms of the phosphine flow (1-20sccm), hydrogen dilution ratio (R=H2/SiH4) as 1-5 and symmetrical stacks structure using a (PH3/SiH4/H2/Ar) mixture were experimentally optimized. In addition, characterization of effective carrier lifetime (τeff), electrical and structure properties as well as correlation with the hydrogen dilution ratio were systematically discussed with the emphasis on the effectiveness of passivation layer. A high quality intrinsic/n-type a-Si:H layer stack BSF layer with measured effective carrier lifetime (τeff) of 1.8ms (which counts for implied Voc 0.707 V), can be consistently obtained and this improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

AB - Silicon-based solar cell manufacturing via plasma enhanced chemical vapor deposition (PECVD) of both active/passive layers is investigated. In addition, in-situ plasma diagnostics of the deposition process can be monitored in real-time. Two types of complementary diagnostics, namely optical emission spectroscopy (OES) and quadruple mass spectrometry (QMS) are applied to an PECVD reactor. Furthermore, the impact of chamber wall conditioning on the solar cell performance is experimentally investigated based on symmetrical stacks structure (a-Si:H(i) / CZ wafer (n)/ a-Si:H(i)) and the n-type hydrogenated amorphous silicon (a-Si:H) growth process conditions were optimized. Silicon heterojunction (SHJ) solar cell back surface field (BSF) layer was prepared by conventional radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) and the processing conditions in terms of the phosphine flow (1-20sccm), hydrogen dilution ratio (R=H2/SiH4) as 1-5 and symmetrical stacks structure using a (PH3/SiH4/H2/Ar) mixture were experimentally optimized. In addition, characterization of effective carrier lifetime (τeff), electrical and structure properties as well as correlation with the hydrogen dilution ratio were systematically discussed with the emphasis on the effectiveness of passivation layer. A high quality intrinsic/n-type a-Si:H layer stack BSF layer with measured effective carrier lifetime (τeff) of 1.8ms (which counts for implied Voc 0.707 V), can be consistently obtained and this improved passivation layer can be primarily attributed to the synergy of chemical and field effect to significantly reduce the surface recombination.

KW - a-Si

KW - Back surface field (BSF)

KW - effective carrier lifetime (Teff)

KW - H

KW - Passivation

KW - PECVD

KW - plasma diagnostics

KW - RF-PECVD

KW - silicon heterojunction (SHJ)

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U2 - 10.1109/CSTIC.2018.8369253

DO - 10.1109/CSTIC.2018.8369253

M3 - 會議論文篇章

AN - SCOPUS:85048855174

T3 - China Semiconductor Technology International Conference 2018, CSTIC 2018

SP - 1

EP - 5

BT - China Semiconductor Technology International Conference 2018, CSTIC 2018

A2 - Wu, Hanming

A2 - Song, Peilin

A2 - Lin, Qinghuang

A2 - Wang, Yuchun

A2 - Claeys, Cor

A2 - Lung, Hsiang-Lang

A2 - Zhang, Ying

A2 - Liang, Steve

A2 - Shi, Yiyu

A2 - Huang, Ru

A2 - Guo, Zhen

A2 - Lai, Kafai

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 China Semiconductor Technology International Conference, CSTIC 2018

Y2 - 11 March 2018 through 12 March 2018

ER -

Hsieh YL, Kau LH, Huang HJ, Lee CC , Fuh YK , Li TT. In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application. In Wu H, Song P, Lin Q, Wang Y, Claeys C, Lung HL, Zhang Y, Liang S, Shi Y, Huang R, Guo Z, Lai K, editors, China Semiconductor Technology International Conference 2018, CSTIC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-5. (China Semiconductor Technology International Conference 2018, CSTIC 2018). doi: 10.1109/CSTIC.2018.8369253

In-situ plasma monitoring of PECVD a-Si:H(i)/a-Si:H (n) surface passivation for heterojunction solar cells application

Abstract

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Keywords

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