In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications

Y. M. Hsin; N. Y. Li; C. W. Tu; P. M. Asbeck

In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications

Y. M. Hsin, N. Y. Li, C. W. Tu, P. M. Asbeck

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have studied the etching effect of Al_xGa_1-xAs (0≤×≤0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of Al_xGa_1-xAs decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×10¹¹ cm^-2 can be obtained at a lower in-situ etching temperature of 550 °C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al_0.35Ga_0.65As/Al_0.25Ga_0.75As and Al_0.35Ga_0.65As/GaAs can be improved.

Original language	English
Pages (from-to)	87-92
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	448
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

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title = "In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications",

abstract = "We have studied the etching effect of AlxGa1-xAs (0≤×≤0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-xAs decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×1011 cm-2 can be obtained at a lower in-situ etching temperature of 550 °C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.",

author = "Hsin, {Y. M.} and Li, {N. Y.} and Tu, {C. W.} and Asbeck, {P. M.}",

year = "1997",

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volume = "448",

pages = "87--92",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

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TY - JOUR

T1 - In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications

AU - Hsin, Y. M.

AU - Li, N. Y.

AU - Tu, C. W.

AU - Asbeck, P. M.

PY - 1997

Y1 - 1997

N2 - We have studied the etching effect of AlxGa1-xAs (0≤×≤0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-xAs decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×1011 cm-2 can be obtained at a lower in-situ etching temperature of 550 °C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

AB - We have studied the etching effect of AlxGa1-xAs (0≤×≤0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-xAs decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×1011 cm-2 can be obtained at a lower in-situ etching temperature of 550 °C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

UR - http://www.scopus.com/inward/record.url?scp=0030648971&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:0030648971

SN - 0272-9172

VL - 448

SP - 87

EP - 92

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

In-situ etch to improve chemical beam epitaxy regrown AlGaAs/GaAs interfaces for HBT applications

Abstract

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