Improving the gas barrier property of SiOx:C thin films deposited by RF magnetron sputtering

Chien Cheng Kuo; Meng Chi Li; Shih Fang Liao; Chin Lun Wei; Hung Sen Wei; Cheng Chung Lee

doi:10.1016/j.surfcoat.2015.08.018

Improving the gas barrier property of SiOx:C thin films deposited by RF magnetron sputtering

Chien Cheng Kuo, Meng Chi Li, Shih Fang Liao, Chin Lun Wei, Hung Sen Wei, Cheng Chung Lee

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This study focuses on the SiOx:C thin films on polyethyleneterephtalate (PET) produced by radio-frequency (RF) magnetron sputtering with hexamethyldisiloxane (HMDSO). Silicon atoms are inserted into SiOx:C thin films using a silicon target to improve the gas barrier property. Since inserting Si atoms into SiOx:C thin films can reduce the number of pores and increase the density of the film. This process has two benefits. First, it can be easily combined with sputtering processes to produce a multilayer film; and second, it can be performed at low pressures (~10^-1Pa) to improve the quality of the plasma polymer film. A more linear-like structure and a less cage-like structure is associated with higher density of SiOx:C thin films. The average transmittance of the films thus obtained exceeds 91% in the wavelengths of visible region, and the lowest water vapor transmission rate achieves 0.076g/m²/day. It is about one fourth of the optimum WVTR value (0.3g/m²/day) of a single layer of SiOx:C thin film fabricated with HMDSO at present.

Original language	English
Pages (from-to)	161-165
Number of pages	5
Journal	Surface and Coatings Technology
Volume	279
DOIs	https://doi.org/10.1016/j.surfcoat.2015.08.018
State	Published - 15 Oct 2015

Keywords

Hexamethyldisiloxane (HMDSO)
RF magnetron sputtering
SiOx:C thin film
Water vapor transmission rate (WVTR)

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10.1016/j.surfcoat.2015.08.018

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title = "Improving the gas barrier property of SiOx:C thin films deposited by RF magnetron sputtering",

abstract = "This study focuses on the SiOx:C thin films on polyethyleneterephtalate (PET) produced by radio-frequency (RF) magnetron sputtering with hexamethyldisiloxane (HMDSO). Silicon atoms are inserted into SiOx:C thin films using a silicon target to improve the gas barrier property. Since inserting Si atoms into SiOx:C thin films can reduce the number of pores and increase the density of the film. This process has two benefits. First, it can be easily combined with sputtering processes to produce a multilayer film; and second, it can be performed at low pressures (~10-1Pa) to improve the quality of the plasma polymer film. A more linear-like structure and a less cage-like structure is associated with higher density of SiOx:C thin films. The average transmittance of the films thus obtained exceeds 91% in the wavelengths of visible region, and the lowest water vapor transmission rate achieves 0.076g/m2/day. It is about one fourth of the optimum WVTR value (0.3g/m2/day) of a single layer of SiOx:C thin film fabricated with HMDSO at present.",

keywords = "Hexamethyldisiloxane (HMDSO), RF magnetron sputtering, SiOx:C thin film, Water vapor transmission rate (WVTR)",

author = "Kuo, {Chien Cheng} and Li, {Meng Chi} and Liao, {Shih Fang} and Wei, {Chin Lun} and Wei, {Hung Sen} and Lee, {Cheng Chung}",

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AU - Kuo, Chien Cheng

AU - Li, Meng Chi

AU - Liao, Shih Fang

AU - Wei, Chin Lun

AU - Wei, Hung Sen

AU - Lee, Cheng Chung

PY - 2015/10/15

Y1 - 2015/10/15

N2 - This study focuses on the SiOx:C thin films on polyethyleneterephtalate (PET) produced by radio-frequency (RF) magnetron sputtering with hexamethyldisiloxane (HMDSO). Silicon atoms are inserted into SiOx:C thin films using a silicon target to improve the gas barrier property. Since inserting Si atoms into SiOx:C thin films can reduce the number of pores and increase the density of the film. This process has two benefits. First, it can be easily combined with sputtering processes to produce a multilayer film; and second, it can be performed at low pressures (~10-1Pa) to improve the quality of the plasma polymer film. A more linear-like structure and a less cage-like structure is associated with higher density of SiOx:C thin films. The average transmittance of the films thus obtained exceeds 91% in the wavelengths of visible region, and the lowest water vapor transmission rate achieves 0.076g/m2/day. It is about one fourth of the optimum WVTR value (0.3g/m2/day) of a single layer of SiOx:C thin film fabricated with HMDSO at present.

AB - This study focuses on the SiOx:C thin films on polyethyleneterephtalate (PET) produced by radio-frequency (RF) magnetron sputtering with hexamethyldisiloxane (HMDSO). Silicon atoms are inserted into SiOx:C thin films using a silicon target to improve the gas barrier property. Since inserting Si atoms into SiOx:C thin films can reduce the number of pores and increase the density of the film. This process has two benefits. First, it can be easily combined with sputtering processes to produce a multilayer film; and second, it can be performed at low pressures (~10-1Pa) to improve the quality of the plasma polymer film. A more linear-like structure and a less cage-like structure is associated with higher density of SiOx:C thin films. The average transmittance of the films thus obtained exceeds 91% in the wavelengths of visible region, and the lowest water vapor transmission rate achieves 0.076g/m2/day. It is about one fourth of the optimum WVTR value (0.3g/m2/day) of a single layer of SiOx:C thin film fabricated with HMDSO at present.

KW - Hexamethyldisiloxane (HMDSO)

KW - RF magnetron sputtering

KW - SiOx:C thin film

KW - Water vapor transmission rate (WVTR)

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EP - 165

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Improving the gas barrier property of SiOx:C thin films deposited by RF magnetron sputtering

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