Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic

N. Y. Li, Y. M. Hsin, P. M. Asbeck, C. W. Tu

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6 Scopus citations

Abstract

In this study we have investigated, for the first time, the morphological and electrical properties of the in-situ etched/regrown interfaces of GaAs and AlxGa1-xAs using tris-dimethylaminoarsenic (TDMAAs) in a chemical beam epitaxy (CBE) chamber. The TDMAAs in-situ etching condition of GaAs is optimized according to the analysis of atomic force microscopy (AFM) and capacitance-voltage (C-V) carrier profiles. The TDMAAs etch rate of GaAs increases from 40 to 135 nm/h by increasing the substrate temperature from 550°C to 700°C, but the etched surface morphology of GaAs on a patterned substrate becomes rougher at higher etching temperatures. A smooth surface morphology of GaAs with an interface state density of 1.4 × 1011 cm-2 can be obtained at a lower in-situ etching temperature of 550°C. TDMAAs is shown to be an effective and promising precursor for in-situ etching of GaAs, thus providing a clean etched/regrown interface for novel device applications.

Original languageEnglish
Pages (from-to)387-392
Number of pages6
JournalJournal of Crystal Growth
Volume175-176
Issue numberPART 1
DOIs
StatePublished - May 1997

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