Improvements of stress migration in nano-scaled copper interconnects

Keyphrases

• Copper Interconnect 100%
• Stress-induced Migration 100%
• Metal Cap 50%
• Narrow Width 25%
• Finite Element Analysis 25%
• Failure Mechanism 25%
• Modeling Techniques 25%
• Downscaling 25%
• Deposition Process 25%
• Failure Mode 25%
• Dielectric 25%
• Nanodevices 25%
• Scaled Interconnect 25%
• Long-term Reliability 25%
• Dual Damascene 25%
• CoWP 25%
• Failure Factors 25%
• Process Flow 25%
• Processing Temperature 25%
• Width Reduction 25%
• Interconnect Scaling 25%
• Process Modeling 25%
• Back-end-of-line 25%
• Stress Gradient 25%
• TiCN 25%
• Nanometre 25%

Engineering

• Interconnects 100%
• Driving Force 66%
• Simulation Result 33%
• Dielectrics 33%
• Deposition Process 33%
• Nanometre 33%
• Narrow Width 33%
• Stress Gradient 33%
• Failure Mode 33%
• Dual Damascene 33%
• Process Flow 33%
• Finite Element Analysis 33%