Abstract
Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 1011 cm-2 to 2.26 × 1012 cm-2 after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1 × 105 to 32 cm/s.
Original language | English |
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Pages (from-to) | C392-C395 |
Journal | Applied Optics |
Volume | 50 |
Issue number | 9 |
DOIs | |
State | Published - 20 Mar 2011 |