Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlOxNy thin films

Sheng Hui Chen, Chun Che Hsu, Hsuan Wen Wang, Chi Li Yeh, Shao Ze Tseng, Hung Ju Lin, Cheng Chung Lee, Cheng Yu Peng

Research output: Contribution to journalArticlepeer-review

Abstract

Negative charge material, AlOxNy, has been fabricated to passivate the surface of p-type silicon. The fabrication of AlOxNy was possible by using ion beam sputtering deposition to deposit AlN thin film on the surface of a p-type silicon wafer and following annealing in oxygen ambient. Capacitance-voltage analysis shows the fixed charge density has increased from 1011 cm-2 to 2.26 × 1012 cm-2 after annealing. The solar cell efficiency increased from 15.9% to 17.3%, which is also equivalent to the reduction of surface recombination velocity from 1 × 105 to 32 cm/s.

Original languageEnglish
Pages (from-to)C392-C395
JournalApplied Optics
Volume50
Issue number9
DOIs
StatePublished - 20 Mar 2011

Fingerprint

Dive into the research topics of 'Improvement of silicon solar cell efficiency by ion beam sputtered deposition of AlO<sub>x</sub>N<sub>y</sub> thin films'. Together they form a unique fingerprint.

Cite this