Improvement of mesa-sidewall leakage current using benzocyclobuten sidewall process in InGaAs/InP MSM photodetector

Wei Yu Chiu, Fan Hsiu Huang, Yen Shian Wu, Don Ming Lin, Yi Jen Chan, Shu Han Chen, Jen Inn Chyi, Jin Wei Shi

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In recent decades, metal-semiconductor-metal (MSM) photodetector for optical fiber communication applications have been studied extensively. The dark current in MSM PD is an important parameter that can be reduced by schottky barrier enhancement and fabrication process. By employing a benzocyclobuten (BCB) sidewall passivation process, the leakage issue between Schottky metal fingers and mesa sidewalls can be avoided. Moreover, the parasitic capacitance can also be decreased due to the low dielectric constant of BCB. The BCB passivation process decreases the dark current density from 11 nA/μm 2 to 5.7pA/μm2.

Original languageEnglish
Pages (from-to)2586-2587
Number of pages2
JournalJapanese Journal of Applied Physics
Volume44
Issue number4 B
DOIs
StatePublished - Apr 2005

Keywords

  • BCB
  • Dark current
  • Metal-semiconductor-metal (MSM)
  • Passivation
  • Photodetector

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