Improvement of heat resistance of hydrogen doped ZnO:Ga thin films

Cheng Chung Lee; Meng Chi Li; Wei Che Sun; Chien Cheng Kuo

doi:10.1149/2.021204esl

Improvement of heat resistance of hydrogen doped ZnO:Ga thin films

Cheng Chung Lee, Meng Chi Li, Wei Che Sun, Chien Cheng Kuo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZOGZO:H films remains nearly stable up to the annealing temperature of 600C, and they maintain low resistivity below 5.6 10 ^-4 -cm.

Original language	English
Pages (from-to)	H94-H96
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	4
DOIs	https://doi.org/10.1149/2.021204esl
State	Published - 2012

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@article{62565a53dbfc4dde9b9b02fcd3671d8a,

title = "Improvement of heat resistance of hydrogen doped ZnO:Ga thin films",

abstract = "This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZOGZO:H films remains nearly stable up to the annealing temperature of 600C, and they maintain low resistivity below 5.6 10 -4 -cm.",

author = "Lee, {Cheng Chung} and Li, {Meng Chi} and Sun, {Wei Che} and Kuo, {Chien Cheng}",

year = "2012",

doi = "10.1149/2.021204esl",

language = "???core.languages.en_GB???",

volume = "15",

pages = "H94--H96",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "4",

}

TY - JOUR

T1 - Improvement of heat resistance of hydrogen doped ZnO:Ga thin films

AU - Lee, Cheng Chung

AU - Li, Meng Chi

AU - Sun, Wei Che

AU - Kuo, Chien Cheng

PY - 2012

Y1 - 2012

N2 - This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZOGZO:H films remains nearly stable up to the annealing temperature of 600C, and they maintain low resistivity below 5.6 10 -4 -cm.

AB - This study shows the excellent heat resistance of hydrogen doped ZnO:Ga (GZO) films successfully fabricated by stacking a GZO protection film. The poor heat resistance of hydrogen doped GZO films caused by the departure of hydrogen from films after the RTA treatment exceeded 400C results in an increase in the resistivity. It means they are not suitable for thin film practical application processing with elevated temperatures. The electrical properties can be seen that the resistivity and carrier concentration of the GZOGZO:H films remains nearly stable up to the annealing temperature of 600C, and they maintain low resistivity below 5.6 10 -4 -cm.

UR - http://www.scopus.com/inward/record.url?scp=84863136264&partnerID=8YFLogxK

U2 - 10.1149/2.021204esl

DO - 10.1149/2.021204esl

M3 - 期刊論文

AN - SCOPUS:84863136264

SN - 1099-0062

VL - 15

SP - H94-H96

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Improvement of heat resistance of hydrogen doped ZnO:Ga thin films

Abstract

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