Improvement of ESD robustness in gallium nitride-based flip-chip HEMT by introducing metal-insulator-metal capacitor

Ping Yu Kuei, Nan Hung Cheng, Yung Fang Chen, Yi Cherng Ferng, Atanu Das, Shu Liang Lin, Ching Chi Lin, Liann Be Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report on improvement of ESD characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) using metal-insulator-metal (MIM) structure aluminium nitride (AlN) flip-chip (FC) submount. Compared with FC-free HEMT, measured results of the FC HEMT show the improvements of 25 and 150% under drain-to-source and gate-to-source electrostatic discharge (ESD) stress respectively, which is attributed to an extra path formed in the MIM structure AlN FC submount to flow the ESD current and to support the charge by the additional capacitances.

Original languageEnglish
Title of host publicationEMC 2014/Tokyo - 2014 International Symposium on Electromagnetic CompatibiIity, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages721-724
Number of pages4
ISBN (Electronic)9784885522871
StatePublished - 23 Dec 2014
Event2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014 - Tokyo, Japan
Duration: 12 May 201416 May 2014

Publication series

NameIEEE International Symposium on Electromagnetic Compatibility
Volume2014-December
ISSN (Print)1077-4076
ISSN (Electronic)2158-1118

Conference

Conference2014 International Symposium on Electromagnetic CompatibiIity, EMC 2014
Country/TerritoryJapan
CityTokyo
Period12/05/1416/05/14

Keywords

  • AlGaN/GaN
  • AlN
  • Capacitor
  • ESD
  • Flip-Chip
  • HEMT

Fingerprint

Dive into the research topics of 'Improvement of ESD robustness in gallium nitride-based flip-chip HEMT by introducing metal-insulator-metal capacitor'. Together they form a unique fingerprint.

Cite this