Improvement of diodes performance with a multiple-pair buffer layer by MOCVD

Chien Cheng Yang; Meng Chyi Wu; Gou Chung Chi; Chang Cheng Chuo; Jen Inn Chyi

doi:10.1016/S0921-5107(00)00693-0

Improvement of diodes performance with a multiple-pair buffer layer by MOCVD

Chien Cheng Yang, Meng Chyi Wu, Gou Chung Chi, Chang Cheng Chuo, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The GaN homo-junction light-emitting diodes (LEDs) with a multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 Å thick GaN nucleation layer grown at a low temperature of 525°C and a 4 m thick GaN epitaxial layer grown at a high temperature of 1025°C. It is found that the GaN LEDs with a three-pair buffer layer will exhibit a low turn-on voltage, stronger electroluminescence intensity and higher light-output power as compared to the conventional growth without a buffer layer. This is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.

Original language	English
Pages (from-to)	253-255
Number of pages	3
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00693-0
State	Published - 22 May 2001

Keywords

GaN
LED
MBL
Multiple buffer layer

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10.1016/S0921-5107(00)00693-0

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title = "Improvement of diodes performance with a multiple-pair buffer layer by MOCVD",

abstract = "The GaN homo-junction light-emitting diodes (LEDs) with a multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 {\AA} thick GaN nucleation layer grown at a low temperature of 525°C and a 4 m thick GaN epitaxial layer grown at a high temperature of 1025°C. It is found that the GaN LEDs with a three-pair buffer layer will exhibit a low turn-on voltage, stronger electroluminescence intensity and higher light-output power as compared to the conventional growth without a buffer layer. This is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.",

keywords = "GaN, LED, MBL, Multiple buffer layer",

author = "Yang, {Chien Cheng} and Wu, {Meng Chyi} and Chi, {Gou Chung} and Chuo, {Chang Cheng} and Chyi, {Jen Inn}",

note = "Funding Information: The authors would like to thank the financial support from the Opto-Electronics & System Laboratories, Industrial Technology Research Institute, and the National Science Council (Nos NSC 88-2215-E-007-004 and NSC 88-2112-M-008-006) is also deeply appreciated.",

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AU - Yang, Chien Cheng

AU - Wu, Meng Chyi

AU - Chi, Gou Chung

AU - Chuo, Chang Cheng

AU - Chyi, Jen Inn

N1 - Funding Information: The authors would like to thank the financial support from the Opto-Electronics & System Laboratories, Industrial Technology Research Institute, and the National Science Council (Nos NSC 88-2215-E-007-004 and NSC 88-2112-M-008-006) is also deeply appreciated.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - The GaN homo-junction light-emitting diodes (LEDs) with a multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 Å thick GaN nucleation layer grown at a low temperature of 525°C and a 4 m thick GaN epitaxial layer grown at a high temperature of 1025°C. It is found that the GaN LEDs with a three-pair buffer layer will exhibit a low turn-on voltage, stronger electroluminescence intensity and higher light-output power as compared to the conventional growth without a buffer layer. This is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.

AB - The GaN homo-junction light-emitting diodes (LEDs) with a multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 Å thick GaN nucleation layer grown at a low temperature of 525°C and a 4 m thick GaN epitaxial layer grown at a high temperature of 1025°C. It is found that the GaN LEDs with a three-pair buffer layer will exhibit a low turn-on voltage, stronger electroluminescence intensity and higher light-output power as compared to the conventional growth without a buffer layer. This is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.

KW - GaN

KW - LED

KW - MBL

KW - Multiple buffer layer

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U2 - 10.1016/S0921-5107(00)00693-0

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M3 - 期刊論文

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VL - 82

SP - 253

EP - 255

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

Improvement of diodes performance with a multiple-pair buffer layer by MOCVD

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Keywords

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