Improvement of diodes performance with a multiple-pair buffer layer by MOCVD

Chien Cheng Yang, Meng Chyi Wu, Gou Chung Chi, Chang Cheng Chuo, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The GaN homo-junction light-emitting diodes (LEDs) with a multiple-pair buffer layer (MBL) were grown by metalorganic vapor phase epitaxy on sapphire substrates. Each pair of the buffer layer consists of a 300 Å thick GaN nucleation layer grown at a low temperature of 525°C and a 4 m thick GaN epitaxial layer grown at a high temperature of 1025°C. It is found that the GaN LEDs with a three-pair buffer layer will exhibit a low turn-on voltage, stronger electroluminescence intensity and higher light-output power as compared to the conventional growth without a buffer layer. This is attributed to the effective reduction in the propagation of defects and dislocations near the p-n junction for the LEDs with MBL.

Original languageEnglish
Pages (from-to)253-255
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
StatePublished - 22 May 2001


  • GaN
  • LED
  • MBL
  • Multiple buffer layer


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