Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

Jen Inn Chyi; Ming Hong Chen; Jen Wei Pan; Tien Tsorng Shih

doi:10.1049/el:19990335

Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

Jen Inn Chyi, Ming Hong Chen, Jen Wei Pan, Tien Tsorng Shih

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Abstract

A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75°C for as-cleaved 1000μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.

Original language	English
Pages (from-to)	1255-1257
Number of pages	3
Journal	Electronics Letters
Volume	35
Issue number	15
DOIs	https://doi.org/10.1049/el:19990335
State	Published - 22 Jul 1999

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title = "Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer",

abstract = "A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75°C for as-cleaved 1000μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.",

author = "Chyi, {Jen Inn} and Chen, {Ming Hong} and Pan, {Jen Wei} and Shih, {Tien Tsorng}",

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AU - Chyi, Jen Inn

AU - Chen, Ming Hong

AU - Pan, Jen Wei

AU - Shih, Tien Tsorng

PY - 1999/7/22

Y1 - 1999/7/22

N2 - A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75°C for as-cleaved 1000μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.

AB - A multiquantum barrier and graded-index separate confinement heterostructure are employed in a 1.55 μm InAlGaAs multiquantum well laser to reduce the threshold current and temperature sensitivity. A characteristic temperature as high as 77K is measured between 25 and 75°C for as-cleaved 1000μm-long uncoated devices. The degradation of slope efficiency in the same temperature range is less than 30%.

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M3 - 期刊論文

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SN - 0013-5194

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JO - Electronics Letters

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ER -

Improved temperature characteristics of 1.55μm InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer

Abstract

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