Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Yung Ling Lan; Hung Cheng Lin; Hsueh Hsing Liu; Geng Yen Lee; Fan Ren; Stephen J. Pearton; Mao Nan Chang; Jen Inn Chyi

doi:10.1117/12.810165

Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Yung Ling Lan
, Hung Cheng Lin
, Hsueh Hsing Liu
, Geng Yen Lee
, Fan Ren
, Stephen J. Pearton
, Mao Nan Chang
, Jen Inn Chyi

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 ^-6 ohm-cm ² on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.

Original language	English
Article number	72162P
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7216
DOIs	https://doi.org/10.1117/12.810165
State	Published - 2009
Event	Gallium Nitride Materials and Devices IV - San Jose, CA, United States Duration: 26 Jan 2009 → 29 Jan 2009

Keywords

AlGaN/GaN heterostructures
Ohmic contacts
Surface morphology
Thermal stability

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10.1117/12.810165

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@article{15992115b2d94112a67b8394728f4179,

title = "Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures",

abstract = "We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 -6 ohm-cm 2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.",

keywords = "AlGaN/GaN heterostructures, Ohmic contacts, Surface morphology, Thermal stability",

author = "Lan, \{Yung Ling\} and Lin, \{Hung Cheng\} and Liu, \{Hsueh Hsing\} and Lee, \{Geng Yen\} and Fan Ren and Pearton, \{Stephen J.\} and Chang, \{Mao Nan\} and Chyi, \{Jen Inn\}",

year = "2009",

doi = "10.1117/12.810165",

language = "???core.languages.en\_GB???",

volume = "7216",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Gallium Nitride Materials and Devices IV ; Conference date: 26-01-2009 Through 29-01-2009",

}

TY - JOUR

T1 - Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

AU - Lan, Yung Ling

AU - Lin, Hung Cheng

AU - Liu, Hsueh Hsing

AU - Lee, Geng Yen

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Chang, Mao Nan

AU - Chyi, Jen Inn

PY - 2009

Y1 - 2009

N2 - We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 -6 ohm-cm 2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.

AB - We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 -6 ohm-cm 2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.

KW - AlGaN/GaN heterostructures

KW - Ohmic contacts

KW - Surface morphology

KW - Thermal stability

UR - https://www.scopus.com/pages/publications/65349170061

U2 - 10.1117/12.810165

DO - 10.1117/12.810165

M3 - 會議論文

AN - SCOPUS:65349170061

SN - 0277-786X

VL - 7216

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 72162P

T2 - Gallium Nitride Materials and Devices IV

Y2 - 26 January 2009 through 29 January 2009

ER -

Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Abstract

Keywords

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