Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Yung Ling Lan, Hung Cheng Lin, Hsueh Hsing Liu, Geng Yen Lee, Fan Ren, Stephen J. Pearton, Mao Nan Chang, Jen Inn Chyi

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 -6 ohm-cm 2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.

Original languageEnglish
Article number72162P
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume7216
DOIs
StatePublished - 2009
EventGallium Nitride Materials and Devices IV - San Jose, CA, United States
Duration: 26 Jan 200929 Jan 2009

Keywords

  • AlGaN/GaN heterostructures
  • Ohmic contacts
  • Surface morphology
  • Thermal stability

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