Abstract
We demonstrate that Ti/Al/Cr/Mo/Au ohmic contact has an extremely smooth surface morphology of 29.0 nm and a low specific contact resistivity (pc) of 1.1×10 -6 ohm-cm 2 on n-type AlGaN/GaN heterostructures. The use of Cr interlayer in Ti/Al/Cr/Mo/Au contacts leads to significantly improved contact morphology without any degradation on the contact resistance. This is attributed to the reduced inter-diffusion and reaction between the layers in the contact stack.
Original language | English |
---|---|
Article number | 72162P |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 7216 |
DOIs | |
State | Published - 2009 |
Event | Gallium Nitride Materials and Devices IV - San Jose, CA, United States Duration: 26 Jan 2009 → 29 Jan 2009 |
Keywords
- AlGaN/GaN heterostructures
- Ohmic contacts
- Surface morphology
- Thermal stability