Improved SiGe power HBT characteristics by emitter layout

Shou Chien Huang, Chia Tsung Chang, Chun Ting Pan, Yue Ming Hsin

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


A new emitter finger layout in SiGe HBT to reduce thermal-coupling is presented in this study. By redistributing the emitter fingers of various SiGe HBTs, the thermal resistance reduces significantly from 133 to 88 K/W under room temperature. Thus, in dc performance, output conductance increases from -2.0 to -1.6 mA/V. In ac performance, the fMAX shows an improvement over 10%. In power performance, the linear power gain, P1 dB and PAEat P1 dB increase by 0.5 dB, 1.5 dB and 6.2% at 1.8 GHz, respectively.

Original languageEnglish
Pages (from-to)946-951
Number of pages6
JournalSolid-State Electronics
Issue number6
StatePublished - Jun 2008


  • Heterojunction bipolar transistor
  • Self-heating
  • Silicon-germanium
  • Temperature


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