Abstract
A single-sided silicon sensor with capacitors coupling and polysilicon bias resistors has been designed and fabricated. A proposed process with ONO (Oxide-Nitride-Oxide) replacing the usual SiO2 layer as the dielectric of coupling capacitor, in conjunction with a reordering of sequence for layer formations, is to produce sensors with self-moisture-protection and free from the effect of pin holes. A comparison of presented data of IV, CV and RV measurements for the sensors with ONO and with SiO2 dielectrics revealed that the ONO processes could lead to an excellent voltage-handling capability of the coupling capacitor. One sensor has been successfully tested twice in the beam at CERN in the past two years, yielding an S/N ratio of 20 and an efficiency above 95%, also demonstrating its excellent stability with respect to lengthy exposure to atmosphere.
Original language | English |
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Pages (from-to) | 463-465 |
Number of pages | 3 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 351 |
Issue number | 2-3 |
DOIs | |
State | Published - 1 Dec 1994 |