Improved power performance of InGaP/GaAs HBT with composite collector

Yue Ming Hsin; Chia Yen Chang; Chang Chung Fan; Che Ming Wang; H. T. Hsu

Improved power performance of InGaP/GaAs HBT with composite collector

Yue Ming Hsin, Chia Yen Chang, Chang Chung Fan, Che Ming Wang, H. T. Hsu

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed and fabricated to obtain the suitable heterojuncton bipolar transistor (HBT) for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage. GaAs materials provides higher electron mobility and thus is used to reduce on-resistance and transit time. In this work, a DHBT with composite collector (DHBT_C) is presented to demonstrate its improved power performance.

Original language	English
Pages (from-to)	202-204
Number of pages	3
Journal	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
State	Published - 2004
Event	2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: 31 May 2004 → 4 Jun 2004

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title = "Improved power performance of InGaP/GaAs HBT with composite collector",

abstract = "InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed and fabricated to obtain the suitable heterojuncton bipolar transistor (HBT) for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage. GaAs materials provides higher electron mobility and thus is used to reduce on-resistance and transit time. In this work, a DHBT with composite collector (DHBT_C) is presented to demonstrate its improved power performance.",

author = "Hsin, {Yue Ming} and Chang, {Chia Yen} and Fan, {Chang Chung} and Wang, {Che Ming} and Hsu, {H. T.}",

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journal = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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TY - JOUR

T1 - Improved power performance of InGaP/GaAs HBT with composite collector

AU - Hsin, Yue Ming

AU - Chang, Chia Yen

AU - Fan, Chang Chung

AU - Wang, Che Ming

AU - Hsu, H. T.

PY - 2004

Y1 - 2004

N2 - InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed and fabricated to obtain the suitable heterojuncton bipolar transistor (HBT) for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage. GaAs materials provides higher electron mobility and thus is used to reduce on-resistance and transit time. In this work, a DHBT with composite collector (DHBT_C) is presented to demonstrate its improved power performance.

AB - InGaP/GaAs double heterojunction bipolar transistors (DHBTs) with composite collector has been proposed and fabricated to obtain the suitable heterojuncton bipolar transistor (HBT) for power amplifiers in wireless communication. The composite collector combines both wide-bandgap (InGaP) and narrow-bandgap (GaAs) materials. In the composite collector, InGaP material provides high breakdown field and thus is able to be employed to reduce thickness of collector while keeping the same breakdown voltage. GaAs materials provides higher electron mobility and thus is used to reduce on-resistance and transit time. In this work, a DHBT with composite collector (DHBT_C) is presented to demonstrate its improved power performance.

UR - http://www.scopus.com/inward/record.url?scp=23744448243&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:23744448243

SN - 1092-8669

SP - 202

EP - 204

JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

T2 - 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM

Y2 - 31 May 2004 through 4 June 2004

ER -

Improved power performance of InGaP/GaAs HBT with composite collector

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