Improved power linearity of InGaP/GaAs HBTs by collector doping design

Yue Ming Hsin; Ze Ming Wang; H. T. Hsu; W. B. Tang; C. T. Pan; Y. L. Ho

doi:10.1109/DRC.2003.1226886

Improved power linearity of InGaP/GaAs HBTs by collector doping design

Yue Ming Hsin, Ze Ming Wang, H. T. Hsu, W. B. Tang, C. T. Pan, Y. L. Ho

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.

Original language	English
Title of host publication	61st Device Research Conference, DRC 2003 - Conference Digest
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	89-90
Number of pages	2
ISBN (Electronic)	0780377273
DOIs	https://doi.org/10.1109/DRC.2003.1226886
State	Published - 2003
Event	61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: 23 Jun 2003 → 25 Jun 2003

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2003-January
ISSN (Print)	1548-3770

Conference

Conference	61st Device Research Conference, DRC 2003
Country/Territory	United States
City	Salt Lake City
Period	23/06/03 → 25/06/03

Keywords

Analytical models
Capacitance
Capacitors
Circuit simulation
Doping profiles
Gallium arsenide
Heterojunction bipolar transistors
Linearity
Medical simulation
Voltage

Access to Document

10.1109/DRC.2003.1226886

Cite this

Hsin, Y. M., Wang, Z. M., Hsu, H. T., Tang, W. B., Pan, C. T., & Ho, Y. L. (2003). Improved power linearity of InGaP/GaAs HBTs by collector doping design. In 61st Device Research Conference, DRC 2003 - Conference Digest (pp. 89-90). [1226886] (Device Research Conference - Conference Digest, DRC; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226886

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title = "Improved power linearity of InGaP/GaAs HBTs by collector doping design",

abstract = "In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.",

keywords = "Analytical models, Capacitance, Capacitors, Circuit simulation, Doping profiles, Gallium arsenide, Heterojunction bipolar transistors, Linearity, Medical simulation, Voltage",

author = "Hsin, {Yue Ming} and Wang, {Ze Ming} and Hsu, {H. T.} and Tang, {W. B.} and Pan, {C. T.} and Ho, {Y. L.}",

note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; null ; Conference date: 23-06-2003 Through 25-06-2003",

year = "2003",

doi = "10.1109/DRC.2003.1226886",

language = "???core.languages.en_GB???",

series = "Device Research Conference - Conference Digest, DRC",

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Hsin, YM, Wang, ZM, Hsu, HT, Tang, WB, Pan, CT & Ho, YL 2003, Improved power linearity of InGaP/GaAs HBTs by collector doping design. in 61st Device Research Conference, DRC 2003 - Conference Digest., 1226886, Device Research Conference - Conference Digest, DRC, vol. 2003-January, Institute of Electrical and Electronics Engineers Inc., pp. 89-90, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 23/06/03. https://doi.org/10.1109/DRC.2003.1226886

Improved power linearity of InGaP/GaAs HBTs by collector doping design. / Hsin, Yue Ming; Wang, Ze Ming; Hsu, H. T. et al.

61st Device Research Conference, DRC 2003 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2003. p. 89-90 1226886 (Device Research Conference - Conference Digest, DRC; Vol. 2003-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Pan, C. T.

AU - Ho, Y. L.

PY - 2003

Y1 - 2003

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AB - In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.

KW - Analytical models

KW - Capacitance

KW - Capacitors

KW - Circuit simulation

KW - Doping profiles

KW - Gallium arsenide

KW - Heterojunction bipolar transistors

KW - Linearity

KW - Medical simulation

KW - Voltage

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T3 - Device Research Conference - Conference Digest, DRC

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PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 23 June 2003 through 25 June 2003

ER -

Improved power linearity of InGaP/GaAs HBTs by collector doping design

Abstract

Publication series

Conference

Keywords

Access to Document

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