Improved power linearity of InGaP/GaAs HBTs by collector doping design

Yue Ming Hsin, Ze Ming Wang, H. T. Hsu, W. B. Tang, C. T. Pan, Y. L. Ho

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, it presents a non-uniform collector doping profile to reduce the nonlinear base-collector capacitance.

Original languageEnglish
Title of host publication61st Device Research Conference, DRC 2003 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages89-90
Number of pages2
ISBN (Electronic)0780377273
DOIs
StatePublished - 2003
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: 23 Jun 200325 Jun 2003

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2003-January
ISSN (Print)1548-3770

Conference

Conference61st Device Research Conference, DRC 2003
Country/TerritoryUnited States
CitySalt Lake City
Period23/06/0325/06/03

Keywords

  • Analytical models
  • Capacitance
  • Capacitors
  • Circuit simulation
  • Doping profiles
  • Gallium arsenide
  • Heterojunction bipolar transistors
  • Linearity
  • Medical simulation
  • Voltage

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