Improved performance of InGaAsN/GaAs lasers with low temperature grown quantum well by MOCVD

N. T. Yeh, B. R. Wu, W. J. Ho, J. I. Chyi

Research output: Contribution to journalArticlepeer-review

Abstract

This paper presents the lasing properties of InGaAsN/GaAs lasers with low temperature and high temperature grown quantum well (QW) by metal-organic chemical vapor deposition. The lasing wavelength, threshold current densities and characteristic temperature of both two QW lasers are characterized and correlated with the photoluminescence spectra. These results show the quality improvement of the lasers with low growth temperature grown QW. 1.27 μm InGaAsN/GaAs edge emitting QW lasers with low threshold current density of 1.5 kA/cm2 and high characteristics temperature of 115 K are demonstrated.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
StatePublished - 2002

Fingerprint

Dive into the research topics of 'Improved performance of InGaAsN/GaAs lasers with low temperature grown quantum well by MOCVD'. Together they form a unique fingerprint.

Cite this