This paper presents the lasing properties of InGaAsN/GaAs lasers with low temperature and high temperature grown quantum well (QW) by metal-organic chemical vapor deposition. The lasing wavelength, threshold current densities and characteristic temperature of both two QW lasers are characterized and correlated with the photoluminescence spectra. These results show the quality improvement of the lasers with low growth temperature grown QW. 1.27 μm InGaAsN/GaAs edge emitting QW lasers with low threshold current density of 1.5 kA/cm2 and high characteristics temperature of 115 K are demonstrated.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 2002|