Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan; Chia Hung Hou; Shao Ze Tseng; Tsing Jen Chen; Hung Ta Chien; Fu Li Hsiao; Chien Chieh Lee; Yen Ling Tsai; Chii Chang Chen

doi:10.1063/1.3173817

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan, Chia Hung Hou, Shao Ze Tseng, Tsing Jen Chen, Hung Ta Chien, Fu Li Hsiao, Chien Chieh Lee, Yen Ling Tsai, Chii Chang Chen

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO ₂ nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Original language	English
Article number	011110
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3173817
State	Published - 2009

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title = "Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate",

abstract = "This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.",

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T1 - Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

AU - Chan, Chia Hua

AU - Hou, Chia Hung

AU - Tseng, Shao Ze

AU - Chen, Tsing Jen

AU - Chien, Hung Ta

AU - Hsiao, Fu Li

AU - Lee, Chien Chieh

AU - Tsai, Yen Ling

AU - Chen, Chii Chang

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N2 - This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

AB - This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

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Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

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