Improved InGaP/GaAs HBTs AC performance and linearity with collector design

Che Ming Wang, Hung Tsao Hsu, Hsiu Chuan Shu, Yu An Liu, Yue Ming Hsin

Research output: Contribution to conferencePaperpeer-review

Abstract

The additional thin high-doping layer within the collector on InGaP/GaAs HBT has been designed and fabricated to improve threshold current of Kirk effect, cutoff frequency, and power distortion while keeping high breakdown voltage. The proposal structure effectively relieves Kirk effect and results in higher current drive and cut-off frequency. From the extracted CBC with VCB, HBT with non-uniform doping collectors demonstrate less base-collector capacitance variation than that in baseline HBT due to the depletion region limited by a thin high-doping layer. The experimental results on third-order intermodulation demonstrate the significant improvement on OIP3 by as targe as 6 dB. This proposed InGaP/GaAs HBT with non-uniform collector doping is well suitable to replace current InGaP/GaAs HBT for power amplifier applications due to its significantly improved linearity and current/frequency capability with negligible impact on dc characteristics and fabrication.

Original languageEnglish
Pages391-394
Number of pages4
StatePublished - 2004
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: 6 Jun 20048 Jun 2004

Conference

ConferenceDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/TerritoryUnited States
CityFort Worth, TX
Period6/06/048/06/04

Keywords

  • Collector
  • GaAs
  • HBT
  • InGaP
  • Kirk effect
  • Linearity

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