Abstract
The additional thin high-doping layer within the collector on InGaP/GaAs HBT has been designed and fabricated to improve threshold current of Kirk effect, cutoff frequency, and power distortion while keeping high breakdown voltage. The proposal structure effectively relieves Kirk effect and results in higher current drive and cut-off frequency. From the extracted CBC with VCB, HBT with non-uniform doping collectors demonstrate less base-collector capacitance variation than that in baseline HBT due to the depletion region limited by a thin high-doping layer. The experimental results on third-order intermodulation demonstrate the significant improvement on OIP3 by as targe as 6 dB. This proposed InGaP/GaAs HBT with non-uniform collector doping is well suitable to replace current InGaP/GaAs HBT for power amplifier applications due to its significantly improved linearity and current/frequency capability with negligible impact on dc characteristics and fabrication.
Original language | English |
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Pages | 391-394 |
Number of pages | 4 |
State | Published - 2004 |
Event | Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States Duration: 6 Jun 2004 → 8 Jun 2004 |
Conference
Conference | Digest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium |
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Country/Territory | United States |
City | Fort Worth, TX |
Period | 6/06/04 → 8/06/04 |
Keywords
- Collector
- GaAs
- HBT
- InGaP
- Kirk effect
- Linearity