Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments

S. W. Lee, L. J. Chen, P. S. Chen, M. J. Tsai, C. W. Liu, W. Y. Chen, T. M. Hsu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

The pre-intermixing treatments of Ge quantum dots (QDs) were demonstrated to be effective in improving the size uniformity and preventing the formation of cone-shaped defects (CSD) in the Ge dots multilayers. The rapid decrease in density of Ge dots with the number of layers is also alleviated. The strain relaxation of Si/Ge multifold layers is characterized by rocking curves. The pre-intermixed Ge dots have a stronger photoluminescence intensity due to a higher Ge dots density and a lower cone-shaped defect density. The results indicate that pre-intermixing treatment of Ge quantum dots is a promising technique for the fabrication of emitters and detectors in Si-based optoelectronic devices.

Original languageEnglish
Pages (from-to)152-155
Number of pages4
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
StatePublished - 15 Mar 2004

Keywords

  • Cone-shaped defects
  • Ge
  • Intermixing
  • Multilayers
  • Self-assembled quantum dots

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