Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, C. C. Yang, Yen Sheng Lin, Chen Hsu, Kung Jeng Ma, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

101 Scopus citations


Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have been widely reported. However, their physical interpretations have not been well discussed yet. Based on wavelength-dependent and temperature-varying time-resolved PL measurements, the mechanism of carrier transport among different levels of localized states (spatially distributed) in such an indium aggregated structure was proposed for interpreting the early-stage fast decay, delayed slow rise, and extended slow decay of PL intensity. Three samples of the same quantum well geometry but different nominal indium contents, and hence different degrees of indium aggregation and carrier localization, were compared. The process of carrier transport was enhanced with a certain amount of thermal energy for overcoming potential barriers between spatially distributed potential minimums. In samples of higher indium contents, more complicated carrier localization potential structures led to enhanced carrier transport activities. Free exciton behaviors of the three samples at high temperatures are consistent with previously reported transmission electron microscopy results.

Original languageEnglish
Pages (from-to)4441-4448
Number of pages8
JournalJournal of Applied Physics
Issue number8
StatePublished - 15 Oct 2002


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