Impact of ion implantation boundary dimensionality on boron transient diffusion in submicron scale patterns

Wei Yen Woon, Chia Ling Chen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We investigate two-dimensional boron transient diffusion in sub-micron scale patterns by plane view scanning capacitance microscopy (SCM). Submicron long strips and squares ion implantation windows of systematically varying sizes have been designed and fabricated. Boron ion implantation and spike annealing were followed to activate the dopant and cause diffusion. Square opening windows show more enhanced diffusion than the long strip counterparts, especially at larger length scales. We explain the observation and fit the experimental data by a nonlinear logistics model. The implication to modern microelectronic circuit design and conventional dopant profiling methodology are discussed.

Original languageEnglish
Article number121907
JournalApplied Physics Letters
Volume97
Issue number12
DOIs
StatePublished - 20 Sep 2010

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