III-Nitride-Based Cyan Light-Emitting Diodes with GHz Bandwidth for High-Speed Visible Light Communication

Jin Wei Shi, Kai Lun Chi, Jhih Min Wun, John E. Bowers, Ya Hsuan Shih, Jinn Kong Sheu

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


A large reduction (from 17 to 5 nm) is made in the thickness of the barrier layers in the multiple-quantum-well region of III-nitride-based cyan light-emitting diodes (LEDs) grown on patterned sapphire substrates. This is shown to lead to a simultaneous improvement in the modulation speed, differential quantum efficiency, and maximum output power of the LEDs under both room temperature and 110 °C operation. With our novel device structure, we achieve a moderate output power (1.7 mW) with a record high 3-dB electrical-to-optical (E-O) bandwidth (1 GHz). The over twofold enhancement in the E-O bandwidth (∼ 1 versus ∼ 0.5 GHz) compared with that previously reported visible LEDs can be attributed to the more uniform distribution of injected carriers within the MQW region and the aggressive downscaling of the thickness of the total active layer, which leads to a shortening of the spontaneous recombination time.

Original languageEnglish
Article number7479469
Pages (from-to)894-897
Number of pages4
JournalIEEE Electron Device Letters
Issue number7
StatePublished - Jul 2016


  • Light-emitting diodes
  • visible light communication


Dive into the research topics of 'III-Nitride-Based Cyan Light-Emitting Diodes with GHz Bandwidth for High-Speed Visible Light Communication'. Together they form a unique fingerprint.

Cite this