@article{9fc90df4e1dd415b8ca8bf76e945b1a8,
title = "IIA-3 Light Emission from the GaAs/AlGaAs HBT Collector Junction at Breakdown",
author = "J. Chen and Gao, {G. B.} and D. Huang and Chyi, {J. I.} and {\"U}nl{\"u}, {M. S.} and H. Morko{\c c}",
note = "Funding Information: *This paper is supported partially by DARPA under Contract N00014- 86-C-0078. [ 11 H. Kroemer, “Heterojunction bipolar transistor and integrated cir-cuits,” Proc. ZEEE, vol. 70, p. 13, 1982. Funding Information: This research was supported in part by funding from Sharp Corporation. The deep oxygen implants were performed by Thomas Kazior of Raytheon Research, Lexington, MA. Funding Information: This work was supported by AFOSR, by SDIO/IST through ONR under Contract N00014-86-K-0513, and by NSF under Contract ECS-88-22406. *On leave from the Beijing Polytechnic University, Reliability Physics Laboratory, Beijing, China.",
year = "1989",
month = nov,
doi = "10.1109/16.43692",
language = "???core.languages.en_GB???",
volume = "36",
pages = "2600--2601",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
number = "11",
}