Hydrogenated silicon thin film and solar cell prepared by electron cyclotron resonance chemical vapor deposition method

Chien Chieh Lee, Jenq Yang Chang, Yen Ho Chu, Chung Min Lien, I. Chen Chen, Tomi Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

Hydrogenated silicon thin film was deposited on glass substrate using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) system. Fourier transform infrared spectroscopy (FTIR) and scanning electron microscope (SEM) were used to measure the film properties. It showed that higher deposition rate (>2nm/sec) and lower microstructure parameter (20%<R*<30%) could be achieved with increasing input power and decreasing hydrogen dilution ratio (H2/SiH4). In addition, p-type and n-type hydrogenated amorphous silicon thin films were grown using SiH4/Ar/H2/B2H6 or PH3 gases. Hall mobility decreased with increasing the doping gas flow rate. The carrier concentration exhibited an entirely converse behavior. With increasing the doping gas flow rate, the concentrations increased and the highest values of 5.2 × 10 19 cm-3 (3.9 × 1019 cm-3) at H2/B 2H6 (H2/PH3) of ∼20 for p-type (n-type) hydrogenated amorphous Si thin films were achieved. These films are suitable for the amorphous Si thin film solar cell.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Pages1103-1108
Number of pages6
Edition1
DOIs
StatePublished - 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: 13 Mar 201114 Mar 2011

Publication series

NameECS Transactions
Number1
Volume34
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference10th China Semiconductor Technology International Conference 2011, CSTIC 2011
Country/TerritoryChina
CityShanghai
Period13/03/1114/03/11

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