Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models

Yen Wen Kang, Geng Yen Lee, Jen Inn Chyi, Chen Pin Hsu, You Ren Hsu, Chia Hsien Hsu, Yu Fen Huang, Yuh Chang Sun, Chih Chen Chen, Sheng Chun Hung, Fan Ren, J. Andrew Yeh, Yu Lin Wang

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Human immunodeficiency virus (HIV) Reverse Transcriptase (RT)-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) and binding-site models were used to find out the dissociation constants of the HIV RT-inhibitor complex and the number of the binding sites on RT for the inhibitor, Efavirenz. One binding site on the RT for the inhibitor is predicted and the dissociation constant extracted from the binding-site model is 0.212 nM. The AlGaN/GaN HEMTs and the binding-site-models are demonstrated to be good tools to assist drug developments by elucidating the dissociation constants and the number of binding sites, which can largely reduce the cost and time for drug developments.

Original languageEnglish
Article number173704
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
StatePublished - 29 Apr 2013

Fingerprint

Dive into the research topics of 'Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models'. Together they form a unique fingerprint.

Cite this