High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor

S. Krishna Sai, Yue Ming Hsin

Research output: Contribution to journalLetterpeer-review

1 Scopus citations

Abstract

This study investigated a normally-off p-GaN/AlGaN/GaN high electron mobility transistor with the extended p-GaN. The optimized recess depth in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. The influences of recess depth in the AlGaN barrier and the extended length of the p-GaN extension on the threshold voltage (VTH), the maximum drain current (ID,MAX), and breakdown voltage were simulated and studied. The proposed transistor with a 1-μm p-GaN extension and 2-nm recess depth in AlGaN barrier shows improvement on VTH and ID,MAX without degrading the breakdown voltage compared with the device without p-GaN extension. Graphic abstract: The optimized recess depth (TR) in the AlGaN barrier under the extended region of p-GaN provides improved device characteristics. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)517-522
Number of pages6
JournalMRS Communications
Volume11
Issue number4
DOIs
StatePublished - Aug 2021

Keywords

  • Barrier layer
  • Devices
  • Electrical properties
  • Epitaxy
  • Simulation

Fingerprint

Dive into the research topics of 'High voltage normally-off extend p-GaN gate with thin AlGaN barrier layer and AlGaN buffer transistor'. Together they form a unique fingerprint.

Cite this