High uniformity of Al_0.3Ga_0.7As/ln_0.15Ga_0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Hall mobility 64%
• Current density 62%
• Gates (transistor) 45%
• Microwave devices 45%
• Substrates 45%
• Charge density 45%
• Optical properties 40%
• Transconductance 38%
• High electron mobility transistors 37%
• Electric breakdown 36%
• Field effect transistors 34%
• Electric properties 34%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Field Effect 64%
• Transconductance 49%
• Breakdown Voltage 48%
• Current Density 47%
• Electron Mobility 38%
• Charge Density 31%
• Electrical Property 27%
• Microwave 26%
• Compound Mobility 24%
• Optical Property 23%
• Application 10%

Physics & Astronomy

• molecular beam epitaxy 54%
• field effect transistors 33%
• current density 30%
• transconductance 23%
• high electron mobility transistors 22%
• electrical faults 21%
• high current 19%
• wafers 16%
• electrical properties 15%
• microwaves 14%
• optical properties 13%