High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

Yi Jen Chan; Ming Ta Yang; Tzu Jin Yeh; Jen Inn Chyi

doi:10.1007/BF02653355

High uniformity of Al_0.3Ga_0.7As/ln_0.15Ga_0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

Yi Jen Chan, Ming Ta Yang, Tzu Jin Yeh, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Al_0.3Ga_0.7As/ln_0.15Ga_0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.

Original language	English
Pages (from-to)	675-679
Number of pages	5
Journal	Journal of Electronic Materials
Volume	23
Issue number	7
DOIs	https://doi.org/10.1007/BF02653355
State	Published - Jul 1994

Keywords

AlGaAs/InGaAs
heterostructure field-effect transistor
molecular beam epitaxy

Access to Document

10.1007/BF02653355

Cite this

@article{c6bb9d98513743dfa6beeb00e72f900f,

title = "High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates",

abstract = "Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.",

keywords = "AlGaAs/InGaAs, heterostructure field-effect transistor, molecular beam epitaxy",

author = "Chan, {Yi Jen} and Yang, {Ming Ta} and Yeh, {Tzu Jin} and Chyi, {Jen Inn}",

year = "1994",

month = jul,

doi = "10.1007/BF02653355",

language = "???core.languages.en_GB???",

volume = "23",

pages = "675--679",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "7",

}

TY - JOUR

T1 - High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

AU - Chan, Yi Jen

AU - Yang, Ming Ta

AU - Yeh, Tzu Jin

AU - Chyi, Jen Inn

PY - 1994/7

Y1 - 1994/7

N2 - Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.

AB - Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.

KW - AlGaAs/InGaAs

KW - heterostructure field-effect transistor

KW - molecular beam epitaxy

UR - http://www.scopus.com/inward/record.url?scp=51649134575&partnerID=8YFLogxK

U2 - 10.1007/BF02653355

DO - 10.1007/BF02653355

M3 - 期刊論文

AN - SCOPUS:51649134575

SN - 0361-5235

VL - 23

SP - 675

EP - 679

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7