High uniformity of Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures grown by molecular beam epitaxy on 3″ GaAs substrates

Yi Jen Chan, Ming Ta Yang, Tzu Jin Yeh, Jen Inn Chyi

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Abstract

Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors, this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power microwave device applications.

Original languageEnglish
Pages (from-to)675-679
Number of pages5
JournalJournal of Electronic Materials
Volume23
Issue number7
DOIs
StatePublished - Jul 1994

Keywords

  • AlGaAs/InGaAs
  • heterostructure field-effect transistor
  • molecular beam epitaxy

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