High thermally stable Ni/Ag(Al) alloy contacts on p-GaN

C. H. Chou, C. L. Lin, Y. C. Chuang, H. Y. Bor, C. Y. Liu

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Ag agglomeration was found to occur at NiAg to p-GaN contacts after annealing at 500 °C. This Ag agglomeration led to the poor thermal stability showed by the NiAg contacts in relation to the reflectivity and electrical properties. However, after alloying with 10 at. % Al by e-gun deposition, the NiAg (Al) p-GaN contacts were found to effectively retard Ag agglomeration thereby greatly enhancing the thermal stability. Based on the x-ray photoelectron spectroscopy analysis, the authors believe that the key for the retardation of Ag agglomeration was the formation of ternary Al-Ni-O layer at p-GaN interface.

Original languageEnglish
Article number022103
JournalApplied Physics Letters
Issue number2
StatePublished - 2007


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