High thermal stable and low resistance contacts to p-GaN for thin-GaN LED

C. L. Lin, S. J. Wang, C. Y. Liu

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


In this work, we investigate the optical and electrical properties of inserting a Ni thin barrier between contact layer, NiO-Au, and reflective layer, Al after sequent elevated annealing in air ambient. The reflectivity of NiO-Au/Ni/Al p-GaN contact configurations is 61% in 470nm which is 10% higher than NiO-Au/Al p-GaN contact configurations, after 500°C annealing. By inserting a Ni barrier layer, the specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm 2, up to an annealing temperature of 500°C - The XPS results confirmed the function of the Ni barrier layer, and it shows relatively low atomic level of Al was detected in the GaN epi-layer. It was found that both the electrical and optical characteristics of NiO-Au/Ni/Al p-GaN contacts exhibited good thermal stability. This high thermal stable P-GaN enables the fabrication of thin-GaN LED device.

Original languageEnglish
Article number59411M
Pages (from-to)1-9
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2005
EventFifth International Conference on Solid State Lighting - San Diego, CA, United States
Duration: 1 Aug 20054 Aug 2005


  • Barrier
  • LED
  • LEDs
  • LLO
  • Ohmic contact
  • P-GaN
  • Reflectivity
  • Thermal stability
  • Thin-GaN
  • Transmittance
  • Wafer bonding


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