High-thermal-stability and low-resistance p-GaN contact for thin-GaN light emitting diodes structure

C. L. Lin; S. J. Wang; C. Y. Liu

doi:10.1149/1.2012203

High-thermal-stability and low-resistance p-GaN contact for thin-GaN light emitting diodes structure

C. L. Lin, S. J. Wang, C. Y. Liu

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11 Scopus citations

Abstract

For thin-GaN LED, Al layer is often incorporated with NiO-Au to form a highly reflective NiO-Au/Al p-GaN contact. Both electrical and optical characteristics of NiO-Au/Al contact exhibited poor thermal stability. X-ray photoelectron spectroscopy (XPS) results showed that the poor thermal stability attributed to the diffusion of Al atoms into GaN epi layer. To prevent Al diffusion, a Ni barrier layer was placed between Al and NiO-Au layer. The specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10^-2 Ω-cm², up to 600°C. XPS results confirmed the function of the Ni barrier layer. Low Al level was detected in GaN epi layer.

Original language	English
Pages (from-to)	G265-G267
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	10
DOIs	https://doi.org/10.1149/1.2012203
State	Published - 2005

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title = "High-thermal-stability and low-resistance p-GaN contact for thin-GaN light emitting diodes structure",

abstract = "For thin-GaN LED, Al layer is often incorporated with NiO-Au to form a highly reflective NiO-Au/Al p-GaN contact. Both electrical and optical characteristics of NiO-Au/Al contact exhibited poor thermal stability. X-ray photoelectron spectroscopy (XPS) results showed that the poor thermal stability attributed to the diffusion of Al atoms into GaN epi layer. To prevent Al diffusion, a Ni barrier layer was placed between Al and NiO-Au layer. The specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm2, up to 600°C. XPS results confirmed the function of the Ni barrier layer. Low Al level was detected in GaN epi layer.",

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T1 - High-thermal-stability and low-resistance p-GaN contact for thin-GaN light emitting diodes structure

AU - Lin, C. L.

AU - Wang, S. J.

AU - Liu, C. Y.

PY - 2005

Y1 - 2005

N2 - For thin-GaN LED, Al layer is often incorporated with NiO-Au to form a highly reflective NiO-Au/Al p-GaN contact. Both electrical and optical characteristics of NiO-Au/Al contact exhibited poor thermal stability. X-ray photoelectron spectroscopy (XPS) results showed that the poor thermal stability attributed to the diffusion of Al atoms into GaN epi layer. To prevent Al diffusion, a Ni barrier layer was placed between Al and NiO-Au layer. The specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm2, up to 600°C. XPS results confirmed the function of the Ni barrier layer. Low Al level was detected in GaN epi layer.

AB - For thin-GaN LED, Al layer is often incorporated with NiO-Au to form a highly reflective NiO-Au/Al p-GaN contact. Both electrical and optical characteristics of NiO-Au/Al contact exhibited poor thermal stability. X-ray photoelectron spectroscopy (XPS) results showed that the poor thermal stability attributed to the diffusion of Al atoms into GaN epi layer. To prevent Al diffusion, a Ni barrier layer was placed between Al and NiO-Au layer. The specific contact resistance of the NiO-Au/Ni/Al was maintained on the order of 10-2 Ω-cm2, up to 600°C. XPS results confirmed the function of the Ni barrier layer. Low Al level was detected in GaN epi layer.

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DO - 10.1149/1.2012203

M3 - 期刊論文

AN - SCOPUS:25644440821

SN - 1099-0062

VL - 8

SP - G265-G267

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

High-thermal-stability and low-resistance p-GaN contact for thin-GaN light emitting diodes structure

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