High-speed sense amplifier for SRAM applications

Chun Lung Hsu, Mean Hom Ho

Research output: Contribution to conferencePaperpeer-review

7 Scopus citations

Abstract

A high-speed sense amplifier capable of static random access memory (SRAM) applications has been developed in this work. The proposed sense amplifier can work at 1GHz with voltage as low as 1.8 V. Restated, the proposed sense amplifier can be used in memory units, as a line receiver and as a restoring element for small-swing logic. Simulated results show that the proposed sense amplifier has 50-87.5% speed improvement compared to the conventional sense amplifiers.

Original languageEnglish
Pages577-580
Number of pages4
StatePublished - 2004
Event2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
Duration: 6 Dec 20049 Dec 2004

Conference

Conference2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
Country/TerritoryTaiwan
CityTainan
Period6/12/049/12/04

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