Abstract
A high-speed sense amplifier capable of static random access memory (SRAM) applications has been developed in this work. The proposed sense amplifier can work at 1GHz with voltage as low as 1.8 V. Restated, the proposed sense amplifier can be used in memory units, as a line receiver and as a restoring element for small-swing logic. Simulated results show that the proposed sense amplifier has 50-87.5% speed improvement compared to the conventional sense amplifiers.
Original language | English |
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Pages | 577-580 |
Number of pages | 4 |
State | Published - 2004 |
Event | 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan Duration: 6 Dec 2004 → 9 Dec 2004 |
Conference
Conference | 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology |
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Country/Territory | Taiwan |
City | Tainan |
Period | 6/12/04 → 9/12/04 |