High-Speed In0.52Al0.48As Based Avalanche Photodiode with Top-Illuminated Design for 100 Gb/s ER-4 System

Song Lin Wu, Naseem, Jhih Min Wun, Rui Lin Chao, Jack Jia Sheng Huang, N. W. Wang, Yu Heng Jan, H. S. Chen, C. J. Ni, Hsiang Szu Chang, Emin Chou, Jin Wei Shi

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

High-speed top-illuminated avalanche photodiodes (APDs) with large diameters (25 μm) are demonstrated for the application of 4-channels 100 Gb/s data rate. They achieve a bandwidth of 17 GHz at low-gain (MG = 6.2; 3.6 A/W) and large-gain bandwidth (responsivity bandwidth) product (410 GHz (237.8 GHz-A/W); 55% external efficiency at the unit gain) while maintaining invariant high speed (14 GHz) under high power (0.5 mW) and 0.9 Vbr operations. By packaging the demonstrated APD with a 25 Gb/s transimpedance amplifier in a 100 Gb/s ROSA package, a good sensitivity of around-20.6 dBm optical modulation amplitude (OMA) at the data rate of 25.78 Gb/s has been successfully demonstrated. The achieved sensitivity not only meets the required receiver sensitivity (-18.5 dBm OMA) in 100 GbE-ER-4 Lite (40 km) system, it is also comparable with that of the high-performance 100 Gb/s ROSA incorporated with the back-side illuminated APD design. Overall, our novel APD structure can eliminate the costly flip-chip bonding package in the 100 Gb/s ROSA without sacrificing its sensitivity performance.

Original languageEnglish
Article number8492441
Pages (from-to)5505-5510
Number of pages6
JournalJournal of Lightwave Technology
Volume36
Issue number23
DOIs
StatePublished - 1 Dec 2018

Keywords

  • Avalanche photodiode
  • photodiode

Fingerprint

Dive into the research topics of 'High-Speed In0.52Al0.48As Based Avalanche Photodiode with Top-Illuminated Design for 100 Gb/s ER-4 System'. Together they form a unique fingerprint.

Cite this