High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

Rong Heng Yuang; Jen Inn Chyi; Wei Lin; Yuan Kuang Tu

doi:10.1007/BF00326205

High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

Rong Heng Yuang, Jen Inn Chyi, Wei Lin, Yuan Kuang Tu

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

High-performance In_0.9Ga₀ ₁P-InP-InGaAs melal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 × 50 μm² and different finger spacings of 2, 3 and 4 μm, all exhibit high responsivities over 0.7 A W^-1 and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.

Original language	English
Pages (from-to)	1327-1334
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	28
Issue number	10
DOIs	https://doi.org/10.1007/BF00326205
State	Published - 1996

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title = "High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield",

abstract = "High-performance In0.9Ga0 1P-InP-InGaAs melal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 × 50 μm2 and different finger spacings of 2, 3 and 4 μm, all exhibit high responsivities over 0.7 A W-1 and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.",

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T1 - High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

AU - Yuang, Rong Heng

AU - Chyi, Jen Inn

AU - Lin, Wei

AU - Tu, Yuan Kuang

PY - 1996

Y1 - 1996

N2 - High-performance In0.9Ga0 1P-InP-InGaAs melal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 × 50 μm2 and different finger spacings of 2, 3 and 4 μm, all exhibit high responsivities over 0.7 A W-1 and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.

AB - High-performance In0.9Ga0 1P-InP-InGaAs melal-semiconductor-metal photodectors with semi-transparent Au Schottky contacts are fabricated and studied. The devices, with an active area of 50 × 50 μm2 and different finger spacings of 2, 3 and 4 μm, all exhibit high responsivities over 0.7 A W-1 and low dark currents below 10 nA. Extremely linear photoresponse without low frequency internal gain is also observed in these devices. The novel fabrication process used in this work is simple and has nearly 100% high yield. A device with a small finger spacing has also been demonstrated to have improved speed performance without sacrificing its responsivity.

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M3 - 期刊論文

AN - SCOPUS:0030261291

VL - 28

SP - 1327

EP - 1334

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

SN - 0306-8919

IS - 10

ER -

High-speed InGaAs metal-semiconductor-metal photodetectors with improved responsivity and process yield

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